Material Specification for Bi:2212; [Bi-Sr-Ca-Cu-O]
Process: Laser Ablation
Notes: "BSCCO thin films were grown by laser ablation... The ArF excimer laser with a wavelength of 193 nm was used. The laser beam, with a pulse energy of 5 J/cm2 and repetition rates of 2-5 Hz, was focused on the rotating target. The targets were sintered pellets with compositions 2212 and 2223. The growth of the film was carried out on single crystal MgO (100) substrates, which were glued with silver paint to a heater block. The distance between the target and the substrate was 8 cm. The substrate temperature, which was monitored on the heater block, was about 640-660 °C during deposition. The growth rate 0.15-1 σ/s, and the film thickness was about 0.2 µm. After deposition, the heater was turned off immediately, and the film was quickly cooled to room temperature in (0.1 MPa = 1 atm) oxygen within 30 min... post annealing was used to improve their transport properties. Films were annealed in a tube furnace in air at 840 °C for 90 min."
Formula: Bi2Sr2CaCu2Ox
Informal Name: Bi:2212
Chemical Family: Bi-Sr-Ca-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form:
Critical Temperature for Bi:2212; [Bi-Sr-Ca-Cu-O]
| Oxygen Pressure (Pa) |
Critical Temperature (K) |
| 3.3 |
78 |
| 13.3 |
70 |
| 53.3 |
72 |
Measurement Method: Four-probe method
"... T
c and J
c were measured using a conventional four-probe method with 1 µV/cm criterion. The 100 µm-wide laser patterned bridge was made on the film for J
c measurements." No additional measurement details were noted.
Cautions: Evaluated Data
Hall Coefficient for Bi:2212; [Bi-Sr-Ca-Cu-O]
| Temperature (K) |
Hall Coefficient (mm3 /C) |
| 82 |
2.6 |
| 84 |
3.3 |
| 92 |
3.6 |
| 90 |
3.9 |
| 98 |
4.4 |
| 113 |
3.4 |
| 121 |
4.1 |
| 141 |
4.1 |
| 160 |
3.7 |
| 178 |
3.7 |
| 201 |
4.0 |
| 221 |
3.8 |
| 229 |
3.9 |
| 260 |
3.5 |
| 271 |
3.6 |
| 291 |
3.2 |
| 300 |
3.2 |
Measurement Method: Hall effect measurement
"... Hall coefficients were measured in a field of 5 T with an applied current of 2 mA." No additional measurement details were noted.
Cautions: Evaluated Data
Digitized data were obtained from Figure 9 of the paper.
Material Specification for Bi:2223; [Bi-Sr-Ca-Cu-O]
Process: Laser Ablation
Notes: "BSCCO thin films were grown by laser ablation... The ArF excimer laser with a wavelength of 193 nm was used. The laser beam, with a pulse energy of 5 J/cm2 and repetition rates of 2-5 Hz, was focused on the rotating target. The targets were sintered pellets with compositions 2212 and 2223. The growth of the film was carried out on single crystal MgO (100) substrates, which were glued with silver paint to a heater block. The distance between the target and the substrate was 8 cm. The substrate temperature, which was monitored on the heater block, was about 640-660 °C during deposition. The growth rate 0.15-1 σ/s, and the film thickness was about 0.2 µm. After deposition, the heater was turned off immediately, and the film was quickly cooled to room temperature in (0.1 MPa = 1 atm) oxygen within 30 min... post annealing was used to improve their transport properties. Films were annealed in a tube furnace in air at 840 °C for 90 min."
Formula: Bi2Sr2Ca2Cu3Ox
Informal Name: Bi:2223
Chemical Family: Bi-Sr-Ca-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form:
Critical Temperature for Bi:2223; [Bi-Sr-Ca-Cu-O]
| Oxygen Pressure (Pa) |
Critical Temperature (K) |
| 2.7 |
97 |
Measurement Method: Four-probe method
"... T
c and J
c were measured using a conventional four-probe method with 1 µV/cm criterion. The 100 µm-wide laser patterned bridge was made on the film for J
c measurements." No additional measurement details were noted.
Cautions: Evaluated Data
