Material Specification for Tl:2223; [Tl-Ba-Ca-Cu-O]
Process: Solid State Reaction
Notes: The authors cite W.Y. Lee, Appl. Phys. Lett, Vol. 60, 772 (1992), and summarize the procedure as follows. "These films were prepared using the low-temperature/pressure annealing technique... Amorphous precursor films of 0.2-1.55 µm thickness were sputter deposited on 1 x 1 cm2 (100) LaAlO3 at ambient temperature (about 32 °C) from a pair of superconducting oxide targets, using a rf diode facing-target sputtering technique. The sputtering targets used were sintered pellets pressed from thoroughly mixed oxide powder mixtures with an initial cation ratio of 2:2:2:3. These films have a composition close to that of the targets used and are amorphous and nonconducting as deposited. They were made superconducting by post annealing under (3-15.2 kPa = 0.03-0.15 atm) O2 at 800-860 °C for up to 15 h. The films were wrapped with 2223 pellets in gold foil and sealed in a quartz tube to minimize Tl loss during annealing... To minimize the nucleation and growth of the Tl2CaBa2Cu2O8 (2122) phase during annealing, a heating rate of > 5 °C/min was used."
Formula: Tl2Ba2Ca2Cu3Ox
Informal Name: Tl:2223
Chemical Family: Tl-Ba-Ca-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film
Surface Resistance for Tl:2223; [Tl-Ba-Ca-Cu-O]
Film Thickness (µm) |
Temperature (K) |
Surface Resistance (mΩ) |
0.2 |
8 |
0.13 |
0.2 |
25 |
1.7 |
0.2 |
51 |
6.1 |
0.2 |
96 |
18 |
0.2 |
110 |
44 |
0.2 |
120 |
490 |
0.2 |
125 |
710 |
0.2 |
145 |
715 |
0.6 |
10 |
0.06 |
0.6 |
28 |
0.55 |
0.6 |
34 |
2.4 |
0.6 |
54 |
6.0 |
0.6 |
91 |
8.4 |
0.6 |
100 |
15 |
0.6 |
111 |
25 |
0.6 |
120 |
340 |
0.6 |
145 |
400 |
Measurement Method: Confocal resonator method
The authors cite J.S. Martens et al., J. Appl. Phys., Vol. 69, 8268 (1991), and summarize the procedure as follows. "All surface resistance... measurements were done using the confocal resonator technique. This technique is based on an open resonant structure formed between a spherical mirror and the planar sample under test. From the quality of the resonance, the resonant frequency, and the known characteristics of the mirror, the surface resistance of the sample can be determined with a sensitivity of about 0.07 mΩ in the 30-40 GHz range and about 0.8 mΩ in the 90-100 GHz range." The reported surface resistance values were obtained at 38 GHz.
Cautions: Evaluated Data
Digitized data were obtained from Figure 2 of the paper.
Penetration Depth for Tl:2223; [Tl-Ba-Ca-Cu-O]
Film Thickness (µm) |
Penetration Depth (σ) |
0.2 |
2215 |
0.4 |
1650 |
0.8 |
1450 |
1.4 |
1690 |
1.55 |
2560 |
Measurement Method: Penetration depth method
The authors cite J.S. Martens et al., IEEE Trans. Mag. MAG-25 (1989) 984, and summarize the procedure as follows. "The penetration depth of all films was measured at 77 K and from about 4-30 GHz using a microstrip flip-chip resonator technique."
Cautions: Evaluated Data
Digitized data were obtained from Figure 1 of the paper.