Material Specification for Ba:11; [Ba(K)-Bi-O]
Process: Electrochemical deposition
Notes: The authors cite J. Marcus et al., Solid State Commun., Vol. 78, 967 (1991), and summarize their procedure as follows. "We have grown Ba1-xKxBiO3 single crystals by an electrochemical method... The crystal used in these experiments has dimensions 0.36 x 0.35 x 0.26 mm3 and shows a well-faced shape and dark blue color... By comparing the Tc with those measured on ceramics, we evaluate that the potassium concentration is 0.35 < x < 0.40 in our crystal."
Formula: Ba1-xKxBiO3
Informal Name: Ba:11
Chemical Family: Ba(K)-Bi-O
Chemical Class: Oxide
Structure Type: Single Crystal
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form:
Critical Flux Density Hc2 for Ba:11; [Ba(K)-Bi-O]
Temperature (K) |
Crit.Mag.Flux Density Hc2 (T) |
2.1 |
30.0 |
4.0 |
26.9 |
6.2 |
23.8 |
7.0 |
21.8 |
8.1 |
20.7 |
10.0 |
17.2 |
11.1 |
16.0 |
13.0 |
13.7 |
14.1 |
13.3 |
15.0 |
11.7 |
15.8 |
10.2 |
16.9 |
8.6 |
19.9 |
6.3 |
22.1 |
3.6 |
24.8 |
1.6 |
27.0 |
0.4 |
Measurement Method: Four-probe method
"Four contacts in a van der Pauw confirguration were fired on the (100) surface. The magnetic field was applied parallel to the contact surface and perpendicular to the current direction. The resistive transitions were measured by an AC technique (100 kHz) with a selective amplifier and a digital storage triggered by the magnetic field. The increasing and decreasing times of the pulsed mangetic field were 70 ms and 800 ms, respectively... We define H
at 50% of the resistive transition... With the H
value measured at low temperatures, we can evaluate the Ginzburg-Landau coherence length..."
Cautions: Evaluated Data
Digitized data were obtained from Figure 3 of the paper.
Coherence Length for Ba:11; [Ba(K)-Bi-O]
Temperature (K) |
Coherence Length (σ) |
0 |
33 |
Measurement Method: Four-probe method
"Four contacts in a van der Pauw confirguration were fired on the (100) surface. The magnetic field was applied parallel to the contact surface and perpendicular to the current direction. The resistive transitions were measured by an AC technique (100 kHz) with a selective amplifier and a digital storage triggered by the magnetic field. The increasing and decreasing times of the pulsed mangetic field were 70 ms and 800 ms, respectively... We define H
at 50% of the resistive transition... With the H
value measured at low temperatures, we can evaluate the Ginzburg-Landau coherence length..."
Cautions: Evaluated Data