NIST High Temp. Superconducting Materials (HTS) Database

NIST High Temp. Superconducting Materials (HTS) Database:

NIST Standard Reference Database 62

Last Update to Data Content: 1996

DOI: https://doi.org/10.18434/T4KP8J

Bibliographic Information

Title: Resistive Transition in TlBiSrCaCuO Thin Films in Magnetic Fields
Author(s): H. Takei, H. Kugai, Y. Torii, and K. Tada
Publication: Physica C Volume: 210 Issue: Not Available Year: 1993 Page(s): 109-113
Editor(s): Not Available
Publisher: Elsevier Science Publishers B.V.
Language: English
Notes: Not Available
Keywords: Material Specification, Critical Temperature, Resistivity (normal state), Irreversibility Field

Materials and Properties

Tl:1223; [Tl(Bi)-Sr-Ca-Cu-O]

Material Specification for Tl:1223; [Tl(Bi)-Sr-Ca-Cu-O] Process: Evaporation
Notes: "The sample of... thin film was prepared by a two-step process which involved deposition of a precursor film onto a LaAlO₃ (100) single crystal substrate, using a high-vacuum evaporation system equipped with three electron guns for Tl, Bi₂O₃, and Cu, and two Knudsen cells for Sr and Cu, followed by ex situ heat-treating at 1190 K for 20 min under thallium oxide vapor. The film thickness was about 0.8 µm. The heat-treated thin film was identified by X-ray diffraction to be the c-axis oriented (Tl,Bi) Sr₂Ca₂Cu₃O_x phase... with a small amount of the (Tl,Bi)Sr₂CaCu₂O_x phase."
Formula: Tl_1-xBi_xSr₂Ca₂Cu₃O_y
Informal Name: Tl:1223
Chemical Family: Tl(Bi)-Sr-Ca-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film

Critical Temperature for Tl:1223; [Tl(Bi)-Sr-Ca-Cu-O]

Field Direction ()	Magnetic Field (T)	Critical Temperature (K)
//ab-plane	0	105
//ab-plane	1	100
//ab-plane	5	93
//ab-plane	9	90
//c-axis	0	105
//c-axis	1	90
//c-axis	5	70
//c-axis	9	59

Measurement Method: Four-probe method
"The electrical resistance was measured with decreasing temperature in a constant magnetic field by a conventional four-probe method using a DC current of 0.5 mA (15 A/cm²). A magnetic field up to 9 T was applied. The thin film sample was placed on a holder which is capable of rotating around a horizontal axis perpendicular to the vertical magnetic field direction. The resistance measurements were carried out by varying the angle θ between the magnetic field direction and the thin film surface (ab-plane), keeping the transport current through the sample perpendicular to the magnetic field. The temperature was monitored by a carbon glass resistance thermometer and the rate of decreasing temperature was 1 K/min... The relationship between the irreversibility magnetic field B (was) obtained from the resistive transition curves... B was defined by using an electrical resistivity criterion of 5x10^-7 Ω cm."

Cautions: Evaluated Data
Values of T_c were taken as the zero resistance temperature values in Fig. 1 of the paper.

Resistivity (normal state) for Tl:1223; [Tl(Bi)-Sr-Ca-Cu-O]

Field Direction ()	Magnetic Field (T)	Temperature (K)	Resistivity (normal state) (mΩ·cm)
ab-plane	9	92	0.003
ab-plane	9	97	0.026
ab-plane	9	102	0.063
ab-plane	9	108	0.094
ab-plane	9	112	0.110
ab-plane	9	120	0.120
ab-plane	5	94	0.003
ab-plane	5	99	0.021
ab-plane	5	102	0.049
ab-plane	5	105	0.079
ab-plane	5	109	0.100
ab-plane	5	114	0.110
ab-plane	5	120	0.120
ab-plane	1	101	0.000
ab-plane	1	104	0.015
ab-plane	1	107	0.050
ab-plane	1	108	0.086
ab-plane	1	110	0.100
ab-plane	1	115	0.110
ab-plane	1	119	0.120
ab-plane	1	120	0.120
ab-plane	0	105	0.000
ab-plane	0	108	0.021
ab-plane	0	109	0.062
ab-plane	0	109	0.081
ab-plane	0	110	0.100
ab-plane	0	111	0.110
ab-plane	0	115	0.110
ab-plane	0	120	0.120
c-axis	9	60	0.001
c-axis	9	69	0.017
c-axis	9	77	0.043
c-axis	9	85	0.068
c-axis	9	96	0.088
c-axis	9	110	0.110
c-axis	9	120	0.120
c-axis	5	71	0.000
c-axis	5	78	0.021
c-axis	5	83	0.040
c-axis	5	88	0.062
c-axis	5	97	0.088
c-axis	5	110	0.110
c-axis	5	120	0.120
c-axis	1	91	0.001
c-axis	1	96	0.027
c-axis	1	100	0.066
c-axis	1	105	0.092
c-axis	1	110	0.110
c-axis	1	120	0.120
c-axis	0	106	0.000
c-axis	0	108	0.021
c-axis	0	109	0.063
c-axis	0	110	0.098
c-axis	0	111	0.110
c-axis	0	120	0.120

Measurement Method: Four-probe method
"The electrical resistance was measured with decreasing temperature in a constant magnetic field by a conventional four-probe method using a DC current of 0.5 mA (15 A/cm²). A magnetic field up to 9 T was applied. The thin film sample was placed on a holder which is capable of rotating around a horizontal axis perpendicular to the vertical magnetic field direction. The resistance measurements were carried out by varying the angle θ between the magnetic field direction and the thin film surface (ab-plane), keeping the transport current through the sample perpendicular to the magnetic field. The temperature was monitored by a carbon glass resistance thermometer and the rate of decreasing temperature was 1 K/min... The relationship between the irreversibility magnetic field B (was) obtained from the resistive transition curves... B was defined by using an electrical resistivity criterion of 5x10^-7 Ω cm."

Cautions: Evaluated Data
Digitized data were obtained from Figure 1a and 1b of the paper.

Irreversibility Field for Tl:1223; [Tl(Bi)-Sr-Ca-Cu-O]

Field Direction ()	Temperature (K)	Irreversibility Field (T)
ab-plane	90.6	9.32
ab-plane	91.4	8.32
ab-plane	92.1	7.32
ab-plane	92.8	6.19
ab-plane	93.6	5.19
ab-plane	95.0	4.19
ab-plane	96.5	3.07
ab-plane	98.0	2.19
ab-plane	100.2	1.06
ab-plane	102.3	0.56
ab-plane	104.5	0.19
c-axis	59.9	9.06
c-axis	61.4	8.06
c-axis	65.8	7.05
c-axis	68.0	5.93
c-axis	68.7	5.05
c-axis	73.1	4.04
c-axis	78.2	3.04
c-axis	83.3	1.91
c-axis	90.6	0.90
c-axis	94.3	0.40
c-axis	98.7	0.14

Measurement Method: Four-probe method
"The electrical resistance was measured with decreasing temperature in a constant magnetic field by a conventional four-probe method using a DC current of 0.5 mA (15 A/cm²). A magnetic field up to 9 T was applied. The thin film sample was placed on a holder which is capable of rotating around a horizontal axis perpendicular to the vertical magnetic field direction. The resistance measurements were carried out by varying the angle θ between the magnetic field direction and the thin film surface (ab-plane), keeping the transport current through the sample perpendicular to the magnetic field. The temperature was monitored by a carbon glass resistance thermometer and the rate of decreasing temperature was 1 K/min... The relationship between the irreversibility magnetic field B (was) obtained from the resistive transition curves... B was defined by using an electrical resistivity criterion of 5x10^-7 Ω cm."

Cautions: Evaluated Data
Digitized data were obtained from Figures 2a and 2b of the paper.