Material Specification for Y:123; [Y-Ba-Cu-O]
Process: Solid State Reaction
Notes: The authors cite U. Poppe et al., Solid State Comm., Vol. 66, 661 (1988), and summarize the procedure as follows. "Among the epitaxial film growth techniques, planar on-axis DC-sputtering under an oxygen pressure (was used)... the sputtering system... consists of two main components - the cathode and the substrate heater. The stoichiometric YBa2Cu3O7-δ target with a diameter of 35 mm is bonded to a watercooled current feedthrough. The feedthrough is surrounded by insulation and partially also by grounded shielding. This leads to a stable stationary gas discharge between the target and the substrate heater... The substrate is placed on top of the heater and is surrounded by a silver frame, which is coated with YBa2Cu3O7-δ... Oxygen flow during the deposition is achieved by pumping the system directly below the heater and using a regulated gas inlet somewhere in the chamber. The deposition rate is mainly dependent on the sputter current and the oxygen pressure and flow. For our geometry, we have obtained sufficient deposition with an oxygen pressure of (385±1 Pa = 3.85±0.01 mbar) a flow of more than 21 L/h and a current of 150 mA. With this set of parameters, we received in 4 h deposition time film thickness of about 300 nm. We have kept this thickness for the whole optimization... We have observed for the heater temperature, measured with the thermocouple, a nearly 80 °C wide window around 835 °C for film growth on MgO and an at least 60 °C around 935 °C for NdGaO3, respectively... we have cooled our films slowly from deposition temperature to room temperature with a rate of 10-50 °C/min in oxygen atmosphere."
Formula: YBa2Cu3O7-x
Informal Name: Y:123
Chemical Family: Y-Ba-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film
Critical Temperature for Y:123; [Y-Ba-Cu-O]
| Critical Temperature (K) |
| 92 ± 1 |
Measurement Method: Microwave cavity method
"The films have been measured in a copper host cavity at 87 GHz." No additional measurement details were noted.
Cautions: Evaluated Data
Critical Current Density for Y:123; [Y-Ba-Cu-O]
| Temperature (K) |
Critical Current Density (kA/cm2) |
| 77 |
5100 ± 100 |
Measurement Method: Inductive current method
The authors cite J.H. Claassen et al., Rev. Sci. Instr., Vol. 62, 996 (1991), and summarize the procedure as follows. "... a contactless inductive J
c measurement technique based on the detection of the third harmonic (was used)."
Cautions: Evaluated Data
Surface Resistance for Y:123; [Y-Ba-Cu-O]
| Temperature (K) |
Surface Resistance (mΩ) |
| 20 |
0.4 |
| 24 |
1.4 |
| 28 |
4.4 |
| 39 |
7.8 |
| 49 |
13 |
| 65 |
18 |
| 80 |
21 |
| 85 |
41 |
| 89 |
120 |
| 90 |
310 |
| 92 |
440 |
| 102 |
540 |
| 112 |
560 |
| 120 |
590 |
Measurement Method: Microwave cavity method
"The films have been measured in a copper host cavity at 87 GHz." No additional measurement details were noted.
Cautions: Evaluated Data
Digitized data were obtained from Figure 3 of the paper.
