Material Specification for Bi:2223; [Bi-Sr-Ca-Cu-O]
Process: Laser Ablation
Notes: "A Questek KrF laser operating at 248 nm (8-25 ns, 10 Hz) was used for ablation. The laser beam was focused onto the target to an area of 5 x 2 mm2 giving rise to a fluence of 1.8 J/cm2. The target was rotated at 1/2 Hz and the laser spot was rastered on the target to get a large area of uniform deposition. The starting target composition was 2.6:2:2:3. The powders were mixed in stoichiometric ratios and ball milled for 8 h. The mixed powders were calcined at 800 °C (30 h.) followed by ball milling and pellets of (2.54 cm = 1 in) diameter were prepared by pressing at (138 MPa = 2000 psi). The targets were sintered in oxygen at 840 °C for 12 h. Hot pressing at (69 MPa = 10000 psi) was done in an inert atmosphere at a temperature of 780 °C for 1 h. No oxygen annealing was performed on the hot pressed targets and hence they were expected to be oxygen deficient. Single crystal (100) MgO substrates were used in this study. The substrates were cleaned by sonicating in methanol for 15 min. The substrate temperature was measured using a type S thermocouple mounted at the back of the substrate holder. Prior to deposition, the target was cleaned by 200 shots of the laser. The chamber was pumped down to (0.13 mPa = 10-6 torr) base pressure and film deposition was carried out in (27-93 Pa = 200-700 mtorr) of oxygen. The typical film thickness were (about) 8000 σ. The oxygen pressure in the chamber was raised from (27 Pa = 200 mtorr) to (93 Pa = 200 mtorr) after deposition and the films were cooled to room temperature in 20 min."
Formula: Bi2Sr2Ca2Cu3O10+x
Informal Name: Bi:2223
Chemical Family: Bi-Sr-Ca-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film
Critical Temperature for Bi:2223; [Bi-Sr-Ca-Cu-O]
| Tc(onset) (K) |
Critical Temperature (K) |
| 110 |
76 |
Measurement Method: Inductive T
c method
Cautions: Unevaluated Data
No measurement details were noted.
Surface Resistance for Bi:2223; [Bi-Sr-Ca-Cu-O]
| Temperature (K) |
Surface Resistance (mΩ) |
| 17 |
5 |
| 27 |
12 |
| 38 |
42 |
| 49 |
94 |
| 60 |
235 |
| 72 |
580 |
| 77 |
1360 |
Measurement Method: Microwave surface resistance
"The microwave surface resistance was measured by replacing the end wall of a cavity operating in the TE
011 mode. The quality factor and the resonant frequency were measured and the surface resistivity was calculated using the values obtained for the film and comparing it with that of copper." The microwave surface resistance was measured at 35 GHz.
Cautions: Evaluated Data
Digitized data were obtained from Figure 8 of the paper.
