Material Specification for Bi:2223; [Bi(Pb)-Sr-Ca-Cu-O]
Process: Sputtering
Notes: "Thin films of... BSCC single phase were produced by RF magnetron sputtering using a single target. The target was prepared by calcining the mixed raw powders with the nominal ratio Bi:Pb:Sr:Ca:Cu=1.6:0.4:2:3:4 for 20 h at 800 °C in air. The sintered ceramic samples were found to exhibit nearly single-phase... Polished MgO (100) single crystals used as substrates were placed 3 cm above the target and kept at 600 °C during deposition. Argon gas was used for sputtering at a pressure of (10 Pa = 0.1 mbar) and the incident RF power was fixed at 100 W. After a 2 h deposition, films about 1 µm thick were obtained. In order to minimize evaporation of the films, the as-deposited films were placed in a small box of Al2O3 together with a sintered ceramic of the same nominal composition as the target, and then heated at 857±1 °C in air. Annealing times from 10 h to 50 h were used..."
Formula: Bi1.6Pb0.4Sr2Ca2Cu3Oy
Informal Name: Bi:2223
Chemical Family: Bi(Pb)-Sr-Ca-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film
Critical Temperature for Bi:2223; [Bi(Pb)-Sr-Ca-Cu-O]
| Tc(onset) (K) |
Critical Temperature (K) |
| 105 |
102 |
Measurement Method: Four-probe method
"The temperature dependence of the resistance R(T) was measured using the standard four-probe DC method and the critical current density J
c was recorded by the resistive method with a 10 µV/cm criterion." No additional measurement details were noted.
Cautions: Evaluated Data
Critical Current Density for Bi:2223; [Bi(Pb)-Sr-Ca-Cu-O]
| Temperature (K) |
Critical Current Density (kA/cm2) |
| 9 |
9.9 |
| 16 |
9.7 |
| 30 |
6.7 |
| 45 |
5.4 |
| 62 |
2.8 |
| 76 |
1.4 |
| 91 |
0.3 |
| 102 |
0.06 |
| 106 |
0.002 |
| 109 |
0.0005 |
Measurement Method: Four-probe method
"The temperature dependence of the resistance R(T) was measured using the standard four-probe DC method and the critical current density J
c was recorded by the resistive method with a 10 µV/cm criterion." No additional measurement details were noted.
Cautions: Evaluated Data
Digitized data were obtained from Figure 4 of the paper.
Resistivity (normal state) for Bi:2223; [Bi(Pb)-Sr-Ca-Cu-O]
| Temperature (K) |
Resistivity (normal state) (mΩ·cm) |
| 102 |
0.00 |
| 103 |
0.02 |
| 106 |
0.07 |
| 107 |
0.20 |
| 110 |
0.29 |
| 116 |
0.36 |
| 129 |
0.42 |
| 151 |
0.48 |
| 201 |
0.60 |
| 246 |
0.71 |
Measurement Method: Four-probe method
"The temperature dependence of the resistance R(T) was measured using the standard four-probe DC method and the critical current density J
c was recorded by the resistive method with a 10 µV/cm criterion." No additional measurement details were noted.
Cautions: Evaluated Data
Digitized data were obtained from Figure 3 of the paper.
