Material Specification for Ba:11; [Ba(K)-Bi-O]
Process: Sputtering
Notes: "... thin films were grown by rf-magnetron sputtering from sintered targets... with a cation ratio Ba:K:Bi=0.3:0.7:0.7. A mixture of argon and 1% oxygen was used as the sputtering gas with total pressure (0.7-2.7 Pa = 5-20 mtorr). The (110) and (100) SrTiO3 substrates were set on a stainless-steel heater block facing the surface of the target. The distance between the target and the substrates was 6.5 cm. In the most of the run, the substrates were attached with silver paste or indium metal to the heater block which was held at a temperature between 300 and 500 °C during the growth. The rf sputter source was operated with rf power of 80 W, resulting in a deposition rate of 1.7 σ/s. The deposition was made for 0.5 h, producing a total film thickness of 3000 σ. Because of the reducing growth conditions, the films had large numbers of oxygen vacancies; these were filled by annealing the films in flowing oxygen at temperatures between 450 °C and 500 °C for 1 h."
Formula: Ba0.55K0.45BiO3
Informal Name: Ba:11
Chemical Family: Ba(K)-Bi-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film
Critical Flux Density Hc2 for Ba:11; [Ba(K)-Bi-O]
| Temperature (K) |
Crit.Mag.Flux Density Hc2 (T) |
| 14.8 |
7.9 |
| 16.8 |
6.0 |
| 18.8 |
3.9 |
| 19.8 |
3.0 |
| 20.8 |
1.9 |
| 21.7 |
1.0 |
| 22.4 |
0.1 |
Measurement Method: Four-probe method
"We measured the resistivity... by the four-probe method. The electrodes were formed by evaporating gold on the as-sputtered films before the oxygen annealing... For the determination of the upper critical field H
we can use the resistivity measurement... We can well define the upper critical magnetic field H
at each temperature from the midpoint of the transition... a linear extrapolation of H
to 0 K consistent with the Ginzburg-Landau... theory (may be used for the) coherence length..."
Cautions: Evaluated Data
Digitized data were obtained from Figure 4b of the paper.
Resistivity (normal state) for Ba:11; [Ba(K)-Bi-O]
| Magnetic Field (T) |
Temperature (K) |
Resistivity (normal state) (mΩ·cm) |
| 8 |
14.0 |
0.00 |
| 8 |
14.6 |
0.08 |
| 8 |
14.9 |
0.25 |
| 8 |
15.2 |
0.38 |
| 8 |
17.6 |
0.40 |
| 8 |
20.7 |
0.40 |
| 8 |
24.2 |
0.40 |
| 6 |
16.1 |
0.00 |
| 6 |
16.6 |
0.08 |
| 6 |
16.7 |
0.19 |
| 6 |
16.9 |
0.28 |
| 6 |
17.3 |
0.39 |
| 6 |
19.2 |
0.40 |
| 6 |
21.0 |
0.40 |
| 6 |
21.5 |
0.40 |
| 4 |
18.4 |
0.00 |
| 4 |
18.6 |
0.06 |
| 4 |
18.8 |
0.15 |
| 4 |
18.9 |
0.27 |
| 4 |
19.1 |
0.34 |
| 4 |
19.1 |
0.37 |
| 4 |
20.5 |
0.39 |
| 4 |
22.6 |
0.40 |
| 4 |
25.1 |
0.40 |
| 3 |
19.2 |
0.00 |
| 3 |
19.6 |
0.06 |
| 3 |
19.7 |
0.22 |
| 3 |
19.8 |
0.33 |
| 3 |
20.1 |
0.37 |
| 3 |
21.0 |
0.39 |
| 2 |
20.4 |
0.00 |
| 2 |
20.8 |
0.23 |
| 2 |
21.0 |
0.36 |
| 2 |
21.8 |
0.39 |
| 2 |
22.9 |
0.40 |
| 1.5 |
20.8 |
0.00 |
| 1.5 |
21.2 |
0.18 |
| 1.5 |
21.4 |
0.29 |
| 1.5 |
21.4 |
0.35 |
| 1.5 |
21.5 |
0.38 |
| 1.5 |
22.8 |
0.39 |
| 1.5 |
23.2 |
0.40 |
| 1 |
21.3 |
0.00 |
| 1 |
21.6 |
0.16 |
| 1 |
21.7 |
0.35 |
| 1 |
22.3 |
0.39 |
| 1 |
23.8 |
0.40 |
| 1 |
25.4 |
0.40 |
| 0.5 |
21.6 |
0.00 |
| 0.5 |
22.1 |
0.14 |
| 0.5 |
22.3 |
0.34 |
| 0.5 |
22.5 |
0.39 |
| 0.5 |
24.7 |
0.40 |
| 0.5 |
25.4 |
0.40 |
| 0 |
21.9 |
0.00 |
| 0 |
22.3 |
0.03 |
| 0 |
22.5 |
0.24 |
| 0 |
22.5 |
0.34 |
| 0 |
22.6 |
0.39 |
| 0 |
23.9 |
0.40 |
| 0 |
26.4 |
0.40 |
| 0 |
29.5 |
0.40 |
Measurement Method: Four-probe method
"We measured the resistivity... by the four-probe method. The electrodes were formed by evaporating gold on the as-sputtered films before the oxygen annealing... For the determination of the upper critical field H
we can use the resistivity measurement... We can well define the upper critical magnetic field H
at each temperature from the midpoint of the transition... a linear extrapolation of H
to 0 K consistent with the Ginzburg-Landau... theory (may be used for the) coherence length..."
Cautions: Evaluated Data
"The resistivity of the ... thin films was sensitive to the temperatures during film growth and annealing procedure... the sample dependence of resistivity should be due to difference in the number of more microscopic lattice imperfections such as dislocations, stacking faults, and antisite defects among the Bi and Ba sites which elastically scatter the charge carriers... Under appropriate conditions we are able to fabricate thin films reproducibly with almost the same resistivity and Tc as sample i, which were mainly used for the measurements of the physical properties ..." "We can call all of these samples "sample i" ..."
Digitized data were obtained from Figure 4a of the paper.
Hall Coefficient for Ba:11; [Ba(K)-Bi-O]
| Temperature (K) |
Hall Coefficient (mm3 /C) |
| 30 |
-0.28 |
| 38 |
-0.29 |
| 106 |
-0.29 |
| 178 |
-0.27 |
| 249 |
-0.27 |
| 297 |
-0.25 |
Measurement Method: Four-probe method
"We measured the resistivity... by the four-probe method. The electrodes were formed by evaporating gold on the as-sputtered films before the oxygen annealing... For the determination of the upper critical field H
we can use the resistivity measurement... We can well define the upper critical magnetic field H
at each temperature from the midpoint of the transition... a linear extrapolation of H
to 0 K consistent with the Ginzburg-Landau... theory (may be used for the) coherence length..."
Cautions: Evaluated Data
Digitized data were obtained from Figure 6 of the paper.
Coherence Length for Ba:11; [Ba(K)-Bi-O]
Measurement Method: Four-probe method
"We measured the resistivity... by the four-probe method. The electrodes were formed by evaporating gold on the as-sputtered films before the oxygen annealing... For the determination of the upper critical field H
we can use the resistivity measurement... We can well define the upper critical magnetic field H
at each temperature from the midpoint of the transition... a linear extrapolation of H
to 0 K consistent with the Ginzburg-Landau... theory (may be used for the) coherence length..."
Cautions: Evaluated Data
