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NIST High Temp. Superconducting Materials (HTS) Database:

NIST Standard Reference Database 62

Last Update to Data Content: 1996

DOI: https://doi.org/10.18434/T4KP8J

Bibliographic Information

Title: Thin Films of (RE)Ba2Cu3O7 In-Situ Epitaxially Grown by Laser Ablation: Crystalline Structure, Resistivity and Critical Exponents of Temperature Dependent Critical Current
Author(s): G. Dousselin, Y. Pellan, C. Thivet, M. Guilloux-Viry, J. Padiou, S. Robinet, and A. Perrin
Publication: Journal of Alloys and Compounds Volume: 195 Issue: Not Available Year: 1993 Page(s): 195-198
Editor(s): Not Available
Publisher: Elsevier Sequoia
Language: English
Notes: Not Available
Keywords: Material Specification, Critical Temperature, Critical Current Density, Resistivity (normal state)

Materials and Properties

Y:123; [Y-Ba-Cu-O]
Eu:123; [Eu-Ba-Cu-O]
Ho:123; [Ho-Ba-Cu-O]
Material Specification for Y:123; [Y-Ba-Cu-O] Process: Laser Ablation
Notes: The authors cite M.G. Karkut et al., Physica C, Vol. 179, 262 (1989), and summarize the procedure as follows. "Thin films have been grown in-situ by laser ablation from a 1:2:3 home made target at a temperature in the range 720-770 °C, under oxygen pressure (30 Pa = 0.3 mbar) on single-crystal substrates such as (100) MgO, (100) and (110) SrTiO3."
Formula: YBa2Cu3O7-x
Informal Name: Y:123
Chemical Family: Y-Ba-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film

Critical Temperature for Y:123; [Y-Ba-Cu-O]
Critical Temperature (K)
82.6 ± 0.2
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data
Critical Current Density for Y:123; [Y-Ba-Cu-O]
Temperature (K) Critical Current Density (kA/cm2)
67 717
70 488
74 268
77 118
80 40
81 16
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data
Digitized data were obtained from Figure 2 of the paper.
Resistivity (normal state) for Y:123; [Y-Ba-Cu-O]
Temperature (K) Resistivity (normal state) (mΩ·cm)
100 0.132
300 0.35
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data
Material Specification for Eu:123; [Eu-Ba-Cu-O] Process: Solid State Reaction
Notes: The authors cite M.G. Karkut et al., Physica C, Vol. 179, 262 (1989), and summarize the procedure as follows. "Thin films have been grown in-situ by laser ablation from a 1:2:3 home made target at a temperature in the range 720-770 °C, under oxygen pressure (30 Pa = 0.3 mbar) on single-crystal substrates such as (100) MgO, (100) and (110) SrTiO3."
Formula: EuBa2Cu3O7-x
Informal Name: Eu:123
Chemical Family: Eu-Ba-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film

Critical Temperature for Eu:123; [Eu-Ba-Cu-O]
Critical Temperature (K)
84.9 ± 0.2
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data
Critical Current Density for Eu:123; [Eu-Ba-Cu-O]
Temperature (K) Critical Current Density (kA/cm2)
75 929
77 614
80 260
82 87
84 16
85 8
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data
Digitized data were obtained from Figure 2 of the paper.
Resistivity (normal state) for Eu:123; [Eu-Ba-Cu-O]
Temperature (K) Resistivity (normal state) (mΩ·cm)
100 0.082
300 0.24
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data
Material Specification for Ho:123; [Ho-Ba-Cu-O] Process: Solid State Reaction
Notes: The authors cite M.G. Karkut et al., Physica C, Vol. 179, 262 (1989), and summarize the procedure as follows. "Thin films have been grown in-situ by laser ablation from a 1:2:3 home made target at a temperature in the range 720-770 °C, under oxygen pressure (30 Pa = 0.3 mbar) on single-crystal substrates such as (100) MgO, (100) and (110) SrTiO3."
Formula: HoBa2Cu3O7-x
Informal Name: Ho:123
Chemical Family: Ho-Ba-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film

Critical Temperature for Ho:123; [Ho-Ba-Cu-O]
Critical Temperature (K)
86.3 ± 0.2
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data
Critical Current Density for Ho:123; [Ho-Ba-Cu-O]
Temperature (K) Critical Current Density (kA/cm2)
66 843
72 559
78 260
81 119
85 24
86 8
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data
Digitized data were obtained from Figure 2 of the paper.
Resistivity (normal state) for Ho:123; [Ho-Ba-Cu-O]
Temperature (K) Resistivity (normal state) (mΩ·cm)
100 0.182
300 0.48
Measurement Method: Four-probe method
"Critical temperatures, Tc (R=0), between 85 and 90 K and ΔTc around 1K (resistively and inductively measured) are routinely obtained... Standard lithography techniques were used to pattern the films into a four probe geometry, the structure consisting of a 200 µm long and 7.5 µm wide stripe. Thermal evaporation of Ag metal pads, together with an "in-situ" ion-beam precleaning operation, allowed us to obtain contact resistances... =10-5Ω.cm2, without any further annealing step... The critical currents were taken with a 0.5 µV voltage criterion from the I(V) characteristics..."

Cautions: Evaluated Data