Material Specification for Bi:221; [Bi-Sr(La)-Cu-O]
Process: Laser Ablation
Notes: "BSLC (x=0.3) thin films were deposited on single crystalline MgO(100) substrates at room temperature by the laser ablation technique using Ar-F excimer pulse laser. The laser beam with an energy of 60-80 mJ/pulse was operated at a repetition rate of 35 pulses per second and focussed on the surface of a target by a quartz lens system. The target was prepared as follows: (1) Each powder of Bi2O3, SrCO3, La2O3 and CuO was weighed with a stoichiometric atomic ratio of BSCL (x=0.3) and the four kinds of powder were mixed in ethyl alcohol; (2) After drying the mixed powder, it was calcined at 820 °C for 10 h and furnace-cooled. At the process of raising the temperature a pause was made at 800 °C for 2 h; (3) After pulverizing the calcined sample, the powder was pressed and formed into a disk of 30 mm in diameter and 5 mm in thickness. This disk was sintered at 845 °C for 25 h and furnace-cooled. At the process of raising the temperature a pause was made at 800 °C for 2 h. As-deposited films were obtained after about 1.5 h of irradiation in vacuo of about (1.3 mPa = 10-5 torr) and then processed in O2 gas flow of about 300 cm3/min as follows: (i) The temperature was raised from 600 °C to 820 °C in 8 h and held at this temperature for one hour. (ii) Then it was raised to 850 °C in 2 h and held at this temperature for 1 h. (iii) The sample was finally furnace-cooled to room temperature... The crystalline thin films had a preferred c-axis orientation perpendicular to the surface of the substrate."
Formula: Bi2Sr1.7La0.3CuO6+x
Informal Name: Bi:221
Chemical Family: Bi-Sr(La)-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film
Critical Temperature for Bi:221; [Bi-Sr(La)-Cu-O]
| Magnetic Field (T) |
Critical Temperature (K) |
| 0.1 |
15.5 |
| 0.2 |
14.8 |
| 0.5 |
13.0 |
| 1.0 |
11.1 |
| 1.5 |
9.8 |
| 2.4 |
7.5 |
Measurement Method: Electrical transport
"The transport current was... parallel to the surface of the film. The resistivity was measured using a current density of 1 A/cm
2. (The results are given for the magnetic field in the ab-plane and parallel to the direction of the current I [Angle(H,I) = 0 ] or perpendicular to I [Angle(H,I) = 90°])... The critical current I
c was determined as the current at which the sample voltage reached 1 µV."
Cautions: Evaluated Data
Critical Current Density for Bi:221; [Bi-Sr(La)-Cu-O]
| Angle(H,I) (degrees) |
Magnetic Field (T) |
Temperature (K) |
Critical Current Density (kA/cm2) |
| 0 |
0.05 |
4.1 |
0.77 |
| 0 |
0.05 |
5.9 |
0.42 |
| 0 |
0.05 |
7.5 |
0.23 |
| 0 |
0.05 |
9.0 |
0.11 |
| 0 |
0.05 |
10.0 |
0.066 |
| 90 |
0.05 |
4.1 |
0.68 |
| 90 |
0.05 |
5.7 |
0.42 |
| 90 |
0.05 |
7.2 |
0.23 |
| 90 |
0.05 |
8.2 |
0.12 |
| 90 |
0.05 |
9.0 |
0.056 |
| 90 |
0.05 |
10.0 |
0.023 |
| 0 |
0.2 |
4.5 |
0.18 |
| 0 |
0.2 |
5.8 |
0.051 |
| 0 |
0.2 |
7.0 |
0.0096 |
| 0 |
0.2 |
8.1 |
0.0018 |
| 0 |
0.2 |
9.2 |
0.0005 |
| 0 |
0.2 |
10.0 |
0.0003 |
| 90 |
0.2 |
4.1 |
0.18 |
| 90 |
0.2 |
6.0 |
0.04 |
| 90 |
0.2 |
7.2 |
0.0057 |
| 90 |
0.2 |
8.0 |
0.0018 |
| 90 |
0.2 |
9.2 |
0.0002 |
Measurement Method: Electrical transport
"The transport current was... parallel to the surface of the film. The resistivity was measured using a current density of 1 A/cm
2. (The results are given for the magnetic field in the ab-plane and parallel to the direction of the current I [Angle(H,I) = 0 ] or perpendicular to I [Angle(H,I) = 90°])... The critical current I
c was determined as the current at which the sample voltage reached 1 µV."
Cautions: Evaluated Data
Digitized data were obtained from Figure 9 of the paper.
Resistivity (normal state) for Bi:221; [Bi-Sr(La)-Cu-O]
| Temperature (K) |
Resistivity (normal state) (mΩ·cm) |
| 5 |
0 |
| 13 |
0 |
| 16 |
1.0 |
| 18 |
2.6 |
| 21 |
3.4 |
| 26 |
3.7 |
| 47 |
3.9 |
| 78 |
4.0 |
Measurement Method: Electrical transport
"The transport current was... parallel to the surface of the film. The resistivity was measured using a current density of 1 A/cm
2. (The results are given for the magnetic field in the ab-plane and parallel to the direction of the current I [Angle(H,I) = 0 ] or perpendicular to I [Angle(H,I) = 90°])... The critical current I
c was determined as the current at which the sample voltage reached 1 µV."
Cautions: Evaluated Data
Digitized data were obtained from Figure 3 of the paper.
Material Specification for Bi:221; [Bi-Sr-Cu-O]
Process: Laser Ablation
Notes: "BSLC (x=0.3) thin films were deposited on single crystalline MgO(100) substrates at room temperature by the laser ablation technique using Ar-F excimer pulse laser. The laser beam with an energy of 60-80 mJ/pulse was operated at a repetition rate of 35 pulses per second and focussed on the surface of a target by a quartz lens system. The target was prepared as follows: (1) Each powder of Bi2O3, SrCO3, La2O3 and CuO was weighed with a stoichiometric atomic ratio of BSCL (x=0.3) and the four kinds of powder were mixed in ethyl alcohol; (2) After drying the mixed powder, it was calcined at 820 °C for 10 h and furnace-cooled. At the process of raising the temperature a pause was made at 800 °C for 2 h; (3) After pulverizing the calcined sample, the powder was pressed and formed into a disk of 30 mm in diameter and 5 mm in thickness. This disk was sintered at 845 °C for 25 h and furnace-cooled. At the process of raising the temperature a pause was made at 800 °C for 2 h. As-deposited films were obtained after about 1.5 h of irradiation in vacuo of about (1.3 mPa = 10-5 torr) and then processed in O2 gas flow of about 300 cm3/min as follows: (i) The temperature was raised from 600 °C to 820 °C in 8 h and held at this temperature for one hour. (ii) Then it was raised to 850 °C in 2 h and held at this temperature for 1 h. (iii) The sample was finally furnace-cooled to room temperature... The crystalline thin films had a preferred c-axis orientation perpendicular to the surface of the substrate."
Formula: Bi2.1Sr1.9CuO6+x
Informal Name: Bi:221
Chemical Family: Bi-Sr-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film
Resistivity (normal state) for Bi:221; [Bi-Sr-Cu-O]
| Temperature (K) |
Resistivity (normal state) (mΩ·cm) |
| 5 |
0 |
| 6 |
0 |
| 7 |
1.2 |
| 8 |
2.6 |
| 8 |
3.0 |
| 10 |
3.2 |
| 19 |
3.2 |
| 34 |
3.2 |
| 54 |
3.2 |
| 80 |
3.3 |
Measurement Method: Electrical transport
"The transport current was... parallel to the surface of the film. The resistivity was measured using a current density of 1 A/cm
2. (The results are given for the magnetic field in the ab-plane and parallel to the direction of the current I [Angle(H,I) = 0 ] or perpendicular to I [Angle(H,I) = 90°])... The critical current I
c was determined as the current at which the sample voltage reached 1 µV."
Cautions: Evaluated Data
Digitized data were obtained from Figure 3 of the paper.
