Material Specification for ; [Y-Ni-B-C]
Process: Crystal Growth
Notes: The authors cite M. Xu et al., Physica C, Vol. 227, 321 (1994), and summarize the procedure as follows. "Single crystals...were grown..."
Formula: YNi2B2C
Informal Name:
Chemical Family: Y-Ni-B-C
Chemical Class: Carbide
Structure Type: Single Crystal
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form:
Critical Temperature for ; [Y-Ni-B-C]
| Pressure (GPa) |
Critical Temperature (K) |
| 0.01 |
15.76 |
| 0.12 |
15.77 |
| 0.44 |
15.78 |
| 0.63 |
15.77 |
| 0.82 |
15.76 |
| 1.02 |
15.75 |
| 1.28 |
15.75 |
| 1.58 |
15.74 |
| 1.85 |
15.71 |
Measurement Method: Four-probe method
"Four-lead electrical-resistance measurements of T
c under hydrostatic pressure were made using a standard piston-cylinder method whereby pressure was applied at room temperature and secured with a pressure clamp. A 50:50 mixture of n-pentane and isoamly-alcohol was used as a pressure transmitting medium, and pressure was determined with the use of a superconducting lead manometer placed close to the sample. Electrical contacts were made to the crystals with silver epoxy, and current was applied perpendicular to the c-axis with typical current densities of 500 mA/cm
2. Temperature was controlled by varying the distance of the pressure clamp from the liquid helium and resulted in cooling and warming rates smaller than 30 mK/min..."
Cautions: Evaluated Data
Digitized data were obtained from Figure 1 of the paper.
Material Specification for ; [Er-Ni-B-C]
Process: Crystal Growth
Notes: The authors cite M. Xu et al., Physica C, Vol. 227, 321 (1994), and summarize the procedure as follows. "Single crystals...were grown..."
Formula: ErNi2B2C
Informal Name:
Chemical Family: Er-Ni-B-C
Chemical Class: Carbide
Structure Type: Single Crystal
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form:
Critical Temperature for ; [Er-Ni-B-C]
| Pressure (GPa) |
Critical Temperature (K) |
| 0.00 |
10.96 |
| 0.13 |
10.97 |
| 0.29 |
11.02 |
| 0.55 |
11.03 |
| 0.87 |
11.02 |
| 1.31 |
11.03 |
| 1.69 |
10.99 |
Measurement Method: Four-probe method
"Four-lead electrical-resistance measurements of T
c under hydrostatic pressure were made using a standard piston-cylinder method whereby pressure was applied at room temperature and secured with a pressure clamp. A 50:50 mixture of n-pentane and isoamly-alcohol was used as a pressure transmitting medium, and pressure was determined with the use of a superconducting lead manometer placed close to the sample. Electrical contacts were made to the crystals with silver epoxy, and current was applied perpendicular to the c-axis with typical current densities of 500 mA/cm
2. Temperature was controlled by varying the distance of the pressure clamp from the liquid helium and resulted in cooling and warming rates smaller than 30 mK/min..."
Cautions: Evaluated Data
Digitized data were obtained from Figure 1 of the paper.
Material Specification for ; [Tm-Ni-B-C]
Process: Crystal Growth
Notes: The authors cite M. Xu et al., Physica C, Vol. 227, 321 (1994), and summarize the procedure as follows. "Single crystals...were grown..."
Formula: TmNi2B2C
Informal Name:
Chemical Family: Tm-Ni-B-C
Chemical Class: Carbide
Structure Type: Single Crystal
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form:
Critical Temperature for ; [Tm-Ni-B-C]
| Pressure (GPa) |
Critical Temperature (K) |
| 0.00 |
10.87 |
| 0.32 |
10.72 |
| 0.55 |
10.61 |
| 0.95 |
10.46 |
| 1.26 |
10.30 |
| 1.65 |
10.10 |
Measurement Method: Four-probe method
"Four-lead electrical-resistance measurements of T
c under hydrostatic pressure were made using a standard piston-cylinder method whereby pressure was applied at room temperature and secured with a pressure clamp. A 50:50 mixture of n-pentane and isoamly-alcohol was used as a pressure transmitting medium, and pressure was determined with the use of a superconducting lead manometer placed close to the sample. Electrical contacts were made to the crystals with silver epoxy, and current was applied perpendicular to the c-axis with typical current densities of 500 mA/cm
2. Temperature was controlled by varying the distance of the pressure clamp from the liquid helium and resulted in cooling and warming rates smaller than 30 mK/min..."
Cautions: Evaluated Data
Digitized data were obtained from Figure 1 of the paper.
Material Specification for ; [Ho-Ni-B-C]
Process: Crystal Growth
Notes: The authors cite M. Xu et al., Physica C, Vol. 227, 321 (1994), and summarize the procedure as follows. "Single crystals...were grown..."
Formula: HoNi2B2C
Informal Name:
Chemical Family: Ho-Ni-B-C
Chemical Class: Carbide
Structure Type: Single Crystal
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form:
Critical Temperature for ; [Ho-Ni-B-C]
| Pressure (GPa) |
Critical Temperature (K) |
| 0.00 |
8.67 |
| 0.05 |
8.67 |
| 0.34 |
8.60 |
| 0.59 |
8.53 |
| 0.95 |
8.45 |
| 1.20 |
8.36 |
| 1.66 |
8.19 |
Measurement Method: Four-probe method
"Four-lead electrical-resistance measurements of T
c under hydrostatic pressure were made using a standard piston-cylinder method whereby pressure was applied at room temperature and secured with a pressure clamp. A 50:50 mixture of n-pentane and isoamly-alcohol was used as a pressure transmitting medium, and pressure was determined with the use of a superconducting lead manometer placed close to the sample. Electrical contacts were made to the crystals with silver epoxy, and current was applied perpendicular to the c-axis with typical current densities of 500 mA/cm
2. Temperature was controlled by varying the distance of the pressure clamp from the liquid helium and resulted in cooling and warming rates smaller than 30 mK/min..."
Cautions: Evaluated Data
Digitized data were obtained from Figure 1 of the paper.
