Critical Temperature for Y:123; [Y-Ba-Cu-O] Measurement Method: Resistivity (DC 4-probe)
Test facility: Lab. of General Electronics, Dept. of Electronic Engineering, Faculty of Engineering, Tohoku University Location: Rm. 217, Electronics & Information Bldg., Faculty of Engineering, Tohoku University Start date: 2/16/94 End date: 2/16/94 Environment temperature (avg): 22 °C Environment humidity (avg): 46 % Remark on lab. environment: humidity after test: 50 % Laboratory environment: air conditioned Test equipment (1): multimeter Maker of test equipment (1): Hewlett Packard Model of test equipment (1): HP3457A Remark on test equipment (1): used for measurement of thermometer voltage and sample end voltage Test equipment (2): digital multimeter Maker of test equipment (2): Hewlett Packard Model of test equipment (2): HP3465B Remark on test equipment (2): Si thermometer, current monitor Test equipment (3): digital multimeter Maker of test equipment (3): Advantest Model of test equipment (3): TR6841 Remark on test equipment (3): for monitoring sample current Test equipment (4): digital multimeter Maker of test equipment (4): Advantest Model of test equipment (4): R6551 Test equipment (5): Pt thermometer, current monitor Maker of test equipment (5): Yokokawa Denki Model of test equipment (5): YEW TYPE 2555 Test equipment (6): DC current source Maker of test equipment (6): Tama Denki Kogyo Model of test equipment (6): SDT-101A Specimen history: stored in desiccator Specimen size - width of thin film: 5.05 mm Specimen size - length of thin film: 36.7 mm Specimen size - thickness of thin film (avg): 0.2 mm Material of current electrode: 0.1 mm diameter Cu wire X3 Distance between current electrodes: 21.6 mm Material of voltage electrode: 0.1 mm diameter Cu wire Distance between voltage electrode: 10 mm Specimen pre-treatment: coating Au to probes by ion sputter HFC-1100 (JEOL) (discharge power: 1200 V x 7 mA, time: 6.5 min, film thickness: 500 Σ, soldering 0.1 mm diameter Cu wire with In, surrounding holder with Cu block, setting the probes on the holder by soldering Test environment: one end of sample cooled into temperature of liquid He, lifted the sample from liquid He surface, temperature increased naturally Test temperature (min): 4.2 K Test temperature (max): 120 K Applied current (avg): 100 mA Other condition: measuring resistances at 300K, 77K, and 4.2K Remark on other condition: temperature monitored by a Si-diode thermometer and a Pt resistance thermometer (SDT-101A) (current: 10 µA and 100 µA respectively) Data output type: sample probe voltage and thermometer voltage, data transferred from HP3457A to PC9801F by GP-IB line, temperature and the measured data saved in floppy disk Data comment (1): plotting and printing the saved data, then determining the dada value with eyes Data comment (2): converting thermometer voltage into temperature by a program based on thermometer correction data and complementary method Data comment (3): measuring thermometer voltages before and after measuring sample probe voltage, taking the average as thermometer voltage

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