NIST High Temp. Superconducting Materials (HTS) Database:

NIST Standard Reference Database 62

Last Update to Data Content: 1996

DOI: https://doi.org/10.18434/T4KP8J


Bibliographic Information

Title: Surface resistance at 9 GHz
Author(s): Not Available
Publication: STA Project Data Volume: Not Available Issue: Not Available Year: 1990 Page(s): Not Available
Editor(s): Not Available
Publisher: Science and Technology Agency of Japan
Language: Japanese
Notes: STA sheet number: 1388,1402
Keywords: Material Specification, Surface Resistance

Materials and Properties

Y:123; [Y-Ba-Cu-O]
Material Specification for Y:123; [Y-Ba-Cu-O] Process:
Notes:
Formula: YBa2Cu3O6.4
Informal Name: Y:123
Chemical Family: Y-Ba-Cu-O
Chemical Class: Oxide
Structure Type:
Manufacturer:
Commercial Name:
Production Date:
Lot Number: BSD64Y
Production Form:
Surface Resistance for Y:123; [Y-Ba-Cu-O]
Temperature (K) Surface Resistance (mΩ)
21.5 107
22.0 108
22.5 111
23.0 114
23.5 114
24.0 115
24.5 124
25.0 125
25.5 133
26.0 134
26.5 141
27.0 142
27.4 143
27.9 150
28.4 158
28.9 162
29.4 166
29.9 171
30.4 172
30.9 176
31.4 176
31.9 183
32.4 183
32.9 190
33.4 196
33.9 195
34.4 199
34.9 203
35.3 204
35.8 208
36.3 206
36.8 212
37.3 212
37.8 216
38.3 215
38.8 216
39.3 219
39.8 219
40.3 220
40.8 221
41.3 223
41.8 223
42.3 222
42.8 223
43.2 227
43.7 223
44.2 221
44.7 221
45.2 221
45.7 221
46.2 222
46.7 222
47.2 221
47.7 221
48.2 223
48.7 223
49.2 222
49.7 219
50.2 221
50.7 221
51.1 219
51.6 220
52.1 221
52.6 220
53.1 219
53.6 219
54.1 219
54.6 219
55.1 219
55.6 219
56.1 219
56.6 219
57.1 219
57.6 221
58.1 219
58.6 219
59.0 216
59.5 219
60.0 219
60.5 216
61.0 216
61.5 219
62.0 219
62.5 219
63.0 216
63.5 216
64.0 217
64.5 220
65.0 221
65.5 221
66.0 219
66.5 216
66.9 216
67.4 216
67.9 216
68.4 216
68.9 216
69.4 219
69.9 216
70.4 216
70.9 216
71.4 218
71.9 219
72.4 219
72.9 216
73.4 216
73.9 216
74.4 216
74.8 218
75.3 216
75.8 216
76.3 216
76.8 216
77.3 216
77.8 216
78.3 221
78.8 217
79.3 217
79.8 214
80.3 214
80.8 214
81.3 214
81.8 214
82.3 214
82.7 216
83.2 214
83.7 214
84.2 216
84.7 214
85.2 214
85.7 214
86.2 214
86.7 219
87.2 214
87.7 214
88.2 214
88.7 214
89.2 214
89.7 214
90.2 216
90.6 214
91.1 214
91.6 212
92.1 214
92.6 213
93.1 214
93.6 214
94.1 214
94.6 214
95.1 214
95.6 214
96.1 214
96.6 214
97.1 214
97.6 216
98.1 214
98.5 215
99.0 216
99.5 215
100.0 214
100.5 215
101.0 216
101.5 214
102.0 216
102.5 216
103.0 214
103.5 214
104.0 216
104.5 214
105.0 219
105.5 216
106.0 213
106.5 212
106.9 212
107.4 212
107.9 214
108.4 214
108.9 212
109.4 212
109.9 212
110.4 212
110.9 214
111.4 212
111.9 214
112.4 214
112.9 212
113.4 212
113.9 212
114.4 213
114.8 214
115.3 214
115.8 214
116.3 214
116.8 214
117.3 214
117.8 214
118.3 214
118.8 214
119.3 219
119.8 214
Measurement Method: Resistivity
Test facility: Faculty of Engineering, the University of Tokyo Location: Rm. 015, Bldg. 6, Faculty of Engineering Start date: 5/27/90 Weekday: Sunday Start time: 15:07 End date: 5/28/90 Weekday: Monday End time: 9:45 Test equipment (1): synthesized sweeper Model of test equipment (1): HP8340B Test equipment (2): scalar network analyzer Model of test equipment (2): HP8757C Test equipment (3): cryostat Maker of test equipment (3): self-made Test equipment (4): cavity resonator Model of test equipment (4): TE112 Specimen shape: disk Specimen sizer: 5 mm Thickness: 0.2 mm Specimen holding: being put at the bottom of the cavity Test environment: thin He gas Test temperature: 20 K - 300 K Remark on test: measuring the blank temperature variation separately Data calculation: refer to Maeda, et al., Sogo Jikken-syo Nenho (1990) Data comment: measuring Q value - resonance wave number, calculating surface resistivity Remark on data: floppy format HP basic LIF

Cautions: Research Data