NIST High Temp. Superconducting Materials (HTS) Database:

NIST Standard Reference Database 62

Last Update to Data Content: 1996

DOI: https://doi.org/10.18434/T4KP8J


Bibliographic Information

Title: Anisotropic Properties of Magnetoresistance and of Critical Currents of BiSrCaCuO High Tc Superconductors
Author(s): O. Laborde, P. Monceau, H. Raffy, and S. Labdi
Publication: Progress in High Temperature Superconductivity Volume: 31 Issue: Not Available Year: 1991 Page(s): 1-12
Editor(s): J.L. Heiras, L.E. Sansores, and A.A. Valladares
Publisher: World Scientific
Language: English
Notes: Not Available
Keywords: Material Specification, Critical Current Density

Materials and Properties

Bi:2212; [Bi-Sr-Ca-Cu-O]
Material Specification for Bi:2212; [Bi-Sr-Ca-Cu-O] Process: Sputtering
Notes: The authors cite H. Raffy, et al., Solid State Commun., Vol. 68, 235 (1988), and H. Raffy, et al., Physica C, Vol. 162-164, 613 (1989), and summarize the procedure as follows. "We have deposited 1000 σ thick films of amorphous Bi-Sr-Ca-Cu-O oxide onto ambient temperature (100) oriented single crystal MgO substrates by DC triode sputtering from 810-815 °C for ten minutes to grow the superconducting phase."
Formula: Bi2Sr2CaCu2O8
Informal Name: Bi:2212
Chemical Family: Bi-Sr-Ca-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film

Critical Current Density for Bi:2212; [Bi-Sr-Ca-Cu-O]
Field Direction () Magnetic Field (T) Critical Current Density (kA/cm2)
H//ab 0.0 117
H//ab 0.0 114
H//ab 0.1 112
H//ab 0.1 114
H//ab 0.2 111
H//ab 0.3 108
H//ab 0.3 106
H//ab 0.3 108
H//ab 0.3 106
H//ab 0.4 109
H//ab 0.4 105
H//ab 0.4 103
H//ab 0.5 105
H//ab 0.5 99
H//ab 0.6 102
H//ab 0.6 96
H//ab 0.6 99
H//ab 0.7 93
H//ab 0.7 96
H//ab 0.7 92
H//ab 0.8 93
H//ab 0.9 86
H//ab 1.0 86
H//ab 1.0 83
H//c 0.0 123
H//c 0.0 109
H//c 0.0 100
H//c 0.1 58
H//c 0.1 36
H//c 0.2 27
H//c 0.2 26
H//c 0.3 29
H//c 0.3 27
H//c 0.4 23
H//c 0.6 20
H//c 0.8 17
H//c 0.9 16
H//c 1.0 16
Measurement Method: Four-probe method
"The critical current of the thin films is measured either by recording the differential resistance dV/dI as a function of the applied current or by a direct dc method with a voltage criterion of a few microvolts."

Cautions: Evaluated Data
Data were digitized from Figure 9 of the paper.