Material Specification for Bi:2212; [Bi-Sr-Ca-Cu-O]
Process: Sputtering
Notes: The authors cite H. Raffy, et al., Solid State Commun., Vol. 68, 235 (1988), and H. Raffy, et al., Physica C, Vol. 162-164, 613 (1989), and summarize the procedure as follows. "We have deposited 1000 σ thick films of amorphous Bi-Sr-Ca-Cu-O oxide onto ambient temperature (100) oriented single crystal MgO substrates by DC triode sputtering from 810-815 °C for ten minutes to grow the superconducting phase."
Formula: Bi2Sr2CaCu2O8
Informal Name: Bi:2212
Chemical Family: Bi-Sr-Ca-Cu-O
Chemical Class: Oxide
Structure Type: Polycrystalline
Manufacturer: In House
Commercial Name: In House
Production Date:
Lot Number:
Production Form: Thin Film
Critical Current Density for Bi:2212; [Bi-Sr-Ca-Cu-O]
Field Direction () |
Magnetic Field (T) |
Critical Current Density (kA/cm2) |
H//ab |
0.0 |
117 |
H//ab |
0.0 |
114 |
H//ab |
0.1 |
112 |
H//ab |
0.1 |
114 |
H//ab |
0.2 |
111 |
H//ab |
0.3 |
108 |
H//ab |
0.3 |
106 |
H//ab |
0.3 |
108 |
H//ab |
0.3 |
106 |
H//ab |
0.4 |
109 |
H//ab |
0.4 |
105 |
H//ab |
0.4 |
103 |
H//ab |
0.5 |
105 |
H//ab |
0.5 |
99 |
H//ab |
0.6 |
102 |
H//ab |
0.6 |
96 |
H//ab |
0.6 |
99 |
H//ab |
0.7 |
93 |
H//ab |
0.7 |
96 |
H//ab |
0.7 |
92 |
H//ab |
0.8 |
93 |
H//ab |
0.9 |
86 |
H//ab |
1.0 |
86 |
H//ab |
1.0 |
83 |
H//c |
0.0 |
123 |
H//c |
0.0 |
109 |
H//c |
0.0 |
100 |
H//c |
0.1 |
58 |
H//c |
0.1 |
36 |
H//c |
0.2 |
27 |
H//c |
0.2 |
26 |
H//c |
0.3 |
29 |
H//c |
0.3 |
27 |
H//c |
0.4 |
23 |
H//c |
0.6 |
20 |
H//c |
0.8 |
17 |
H//c |
0.9 |
16 |
H//c |
1.0 |
16 |
Measurement Method: Four-probe method
"The critical current of the thin films is measured either by recording the differential resistance dV/dI as a function of the applied current or by a direct dc method with a voltage criterion of a few microvolts."
Cautions: Evaluated Data
Data were digitized from Figure 9 of the paper.