NIST Structural Ceramics Database (SCD) Database

NIST Standard Reference Database 30

Last Update to Data Content: 2002

DOI: http://dx.doi.org/10.18434/T4F30D


SCD Citation Number: Z00007

Bibliographic Information

Reference:
"Effects of Elemental Additives on Densification, Microstructure, Strength, and Thermal Conductivity of Silicon Carbide Ceramics," Y. Takeda, K. Nakamura, K. Maeda, and M. Ura, Advanced Ceramic Materials, Vol. 1 [2], pp. 162-165 (1986), published by American Ceramic Society.
Language: English

General Materials Processing Notes

"About 35 g of SiC powder (Fujimi Abrasive Co., Ltd., Aichi, Japan), 1 wt% additives, 3.5 mL silicone oil, and 3.5 mL xylene were put into an alumina bottle and mixed using an alumina mortar and pestle for 1 h. ... The mixed composites were pressed with a carbon-steel die (50 mm inner diameter) at a load of 100 MPa. After the mixtures were cold-pressed, the green body had a density of 1.71 g/cm3 to 1.73 g/cm3 ... After the green body was set in a graphite die, the chamber of the hot pressing furnace was evacuated to 1mPa to 10 mPa, and the sample was pressed at 20 MPa. The graphite die was heated inductively to 2040 °C during a 100 min period and then held for 1 h." The sintering aids (mass fraction of 1 %) were (Material #1, Al), (Material #2, B), and (Material #3, Be).

Measurement Methods

Laser flash technique
The measurements were made "by a laser-flash method at 25 °C. With this method, the specific heat and thermal diffusivity could be obtained. The thermal conductivity, K, was calculated from: K = qCpd where q = thermal diffusivity, Cp = specific heat, and d = density. Samples were 10 mm in diameter and 2-5 mm thick." However, no values of q or Cp were noted.
Three-point bend test
The measurements were made by a three-point bend method. Flexural strength samples were machined to 2 mm x 2 mm x 50 mm on a metal-bonded diamond wheel. All surfaces were polished with 2 µm resin-bonded diamond disk to a surface roughness of 0.1 µm. Tests were conducted using a DSS-5000 (Shimazu Ltd., Japan) tester with a crosshead speed of 2 mm/min and a span of 30 mm in air at 25 °C.

Index of Materials and Properties (Click on a selected Material Number to expand material properties menu)

Material Specification and Properties for SiC

Material number 1 of 3
in SCD Citation Number: Z00007
Chemical Class: Carbide
Chemical Family: Si-C:Al
Formula: SiC
Informal Name: silicon carbide
Structure Type: Polycrystalline
Manufacturer: In-House
Production Form: Disk
Process: Hot Pressing

SiC

Material number 1 of 3
in SCD Citation Number: Z00007
Elemental Composition
Amount of
Element
( formula units )
Element
 
( no unit )
1 Si
1 C
Measurement Method: Reported Formula
Evaluation Status: Unevaluated

SiC

Material number 1 of 3
in SCD Citation Number: Z00007
Density (mass)
Density
 
( g cm-3 )
3.18

Measurement Method: Unknown
Evaluation Status: Unevaluated

SiC

Material number 1 of 3
in SCD Citation Number: Z00007
Flexural Strength
Temperature
 
( °C )
Flexural
Strength
( MPa )
25 940

Measurement Method: Three-point bend test
Evaluation Status: Evaluated by acceptance criteria

SiC

Material number 1 of 3
in SCD Citation Number: Z00007
Thermal Conductivity
Temperature
 
( °C )
Thermal
Conductivity
( W m-1 K-1 )
25 60

Measurement Method: Laser flash technique
Evaluation Status: Evaluated by acceptance criteria

Material Specification and Properties for SiC

Material number 2 of 3
in SCD Citation Number: Z00007
Chemical Class: Carbide
Chemical Family: Si-C:B
Formula: SiC
Informal Name: silicon carbide
Structure Type: Polycrystalline
Manufacturer: In-House
Production Form: Disk
Process: Hot Pressing

SiC

Material number 2 of 3
in SCD Citation Number: Z00007
Elemental Composition
Amount of
Element
( formula units )
Element
 
( no unit )
1 Si
1 C
Measurement Method: Reported Formula
Evaluation Status: Unevaluated

SiC

Material number 2 of 3
in SCD Citation Number: Z00007
Density (mass)
Density
 
( g cm-3 )
3.18
Measurement Method: Unknown
Evaluation Status: Unevaluated

SiC

Material number 2 of 3
in SCD Citation Number: Z00007
Flexural Strength
Temperature
 
( °C )
Flexural
Strength
( MPa )
25 290
Measurement Method: Three-point bend test
Evaluation Status: Evaluated by acceptance criteria

SiC

Material number 2 of 3
in SCD Citation Number: Z00007
Thermal Conductivity
Temperature
 
( °C )
Thermal
Conductivity
( W m-1 K-1 )
25 170
Measurement Method: Laser flash technique
Evaluation Status: Evaluated by acceptance criteria

Material Specification and Properties for SiC

Material number 3 of 3
in SCD Citation Number: Z00007
Chemical Class: Carbide
Chemical Family: Si-C:BeO
Formula: SiC
Informal Name: silicon carbide
Structure Type: Polycrystalline
Manufacturer: In-House
Production Form: Disk
Process: Hot Pressing

SiC

Material number 3 of 3
in SCD Citation Number: Z00007
Elemental Composition
Amount of
Element
( formula units )
Element
 
( no unit )
1 Si
1 C

Measurement Method: Reported Formula
Evaluation Status: Unevaluated

SiC

Material number 3 of 3
in SCD Citation Number: Z00007
Density (mass)
Density
 
( g cm-3 )
3.15

Measurement Method: Unknown
Evaluation Status: Unevaluated

SiC

Material number 3 of 3
in SCD Citation Number: Z00007
Flexural Strength
Temperature
 
( °C )
Flexural
Strength
( MPa )
25 400
Measurement Method: Three-point bend test
Evaluation Status: Evaluated by acceptance criteria

SiC

Material number 3 of 3
in SCD Citation Number: Z00007
Thermal Conductivity
Temperature
 
( °C )
Thermal
Conductivity
( W m-1 K-1 )
25 260

Measurement Method: Laser flash technique
Evaluation Status: Evaluated by acceptance criteria