NIST Structural Ceramics Database (SCD) Database

NIST Standard Reference Database 30

Last Update to Data Content: 2002

DOI: http://dx.doi.org/10.18434/T4F30D


SCD Citation Number: Z00011

Bibliographic Information

Reference:
"Thermal Expansion of the Cubic (3C) Polytype of SiC," Z. Li and R.C. Bradt, Journal of Materials Science, Vol. 21 [12], pp. 4366-4368 (1986), published by Chapman and Hall.
Language: English

General Materials Processing Notes

"Two β-SiC materials were obtained from PPG Industries (Barberton, Ohio) and General Electric Co. (Schenectady, New York) as (submicrometer) size powders which were a dark grey in colour. ... Not only are the room temperature lattice parameters identical for these two materials, but their thermal expansions are also equivalent..."

Measurement Methods

X-ray diffraction
"Thermal expansion measurements were completed using nickel filtered CuKα radiation and a commercial high temperature diffractometer attachment with a platinum heating stage/sample holder ... A helium atmosphere was used to prevent oxidation or nitridation of the sample SiC materials during the high temperature measurements. ... the diffractometer was calibrated using a high purity α-Al2O3 powder ..."

Index of Materials and Properties

Material Number 1: SiC

Material Specification and Properties for SiC

Material number 1 of 1
in SCD Citation Number: Z00011
Chemical Class: Carbide
Chemical Family: Si-C
Formula: SiC
Informal Name: silicon carbide
Structure Type: Polycrystalline
Manufacturer: General Electric Company
Production Form: Powder
Process:

SiC

Material number 1 of 1
in SCD Citation Number: Z00011
Elemental Composition
Amount of
Element
( formula units )
Element
 
( no unit )
1 Si
1 C

Measurement Method: Reported Formula
Evaluation Status: Unevaluated

SiC

Material number 1 of 1
in SCD Citation Number: Z00011
Crystal Cell Axes
Temperature
 
( °C )
Axis
 
 
Axis Length
 
( Å )
20 a 4.3577
100 a 4.3578
200 a 4.3580
400 a 4.3584
600 a 4.3588
800 a 4.3592
1000 a 4.3596

Measurement Method: X-ray diffraction
Evaluation Status: Evaluated by acceptance criteria

SiC

Material number 1 of 1
in SCD Citation Number: Z00011
Crystal Cell System
Crystal Cell
System
 
Cubic

Measurement Method: X-ray diffraction
Evaluation Status: Evaluated by acceptance criteria

SiC

Material number 1 of 1
in SCD Citation Number: Z00011
Thermal Expansion
Temperature
 
( °C )
Thermal
Expansion
( 10-6 K-1 )
15 3.3
96 3.5
194 3.8
289 4.1
388 4.3
494 4.6
591 4.7
696 4.9
787 5.0
889 5.1
991 5.1
Measurement Method: X-ray diffraction
Evaluation Status: Evaluated by acceptance criteria Cautions:
Digitized data were obtained from Figure 2 of the paper.