NIST Structural Ceramics Database (SCD) Database

NIST Standard Reference Database 30

Last Update to Data Content: 2002

DOI: http://dx.doi.org/10.18434/T4F30D


SCD Citation Number: Z00018

Bibliographic Information

Reference:
"Properties of Hot-Pressed Barium-Doped SiC," T. Sakai and N. Hirosaki, Journal of Materials Science Letters, Vol. 5 [1], pp. 43-44 (1986), published by Chapman and Hall.
Language: English

General Materials Processing Notes

"...silicon carbide is densified by hot-pressing, adding barium oxide and carbon simultaneously. The powder with 3 % to 5 % (mass fraction) of BaO and 0.6 % to 2 % of carbon in the ratio 4:5 of the two additives, respectively, was densified to obtain compacts denser than 3.0 g/cm3. ...the SiC specimen (10 mm diameter and about 2 mm thick), (was) hot-pressed in a vacuum under a pressure of 20 MPa at 2050 °C for 30 min."

Measurement Methods

Laser flash technique
The authors cite W.J. Parker et al., Journal of Applied Physics, Vol. 32, 1679 (1961), and summarize the procedure as follows. "Thermal diffusivity... was measured using the laser flash method at 298 K. Thermal conductivity, k, was then calculated by k = αCpd where α is the measured thermal diffusivity, d is the density, and Cp is the specific heat of the material. The value used for Cp was 0.66 J g-1 K-1. Corrections were made for the porosity of the compact..."
Three-point bend test
"Test pieces for three-point flexural strength of the compacts, 2.8 mm x 3.5 mm x 25 mm, were cut from the disk of 33 mm diameter and about 4 mm thick and ground with a 60 µm diamond grinding wheel. The test load was applied over a 20 mm span at a crosshead spead of 0.5 mm min-1 at room temperature using a universal tester in the direction that hot pressing had been performed."

Index of Materials and Properties

Material Number 1: SiC·xBaO·yC

Material Specification and Properties for SiC·xBaO·yC

Material number 1 of 1
in SCD Citation Number: Z00018
Chemical Class: Carbide
Chemical Family: SiC:BaO,C
Formula: SiC·xBaO·yC
Informal Name: silicon carbide
Structure Type: Polycrystalline
Manufacturer: In-House
Production Form: Disk
Process: Hot Pressing

SiC·xBaO·yC

Material number 1 of 1
in SCD Citation Number: Z00018
Elemental Composition
Amount of
Element
( formula units )
Element
 
( no unit )
1 Si
1 C
Measurement Method: Reported Formula
Evaluation Status: Unevaluated

SiC·xBaO·yC

Material number 1 of 1
in SCD Citation Number: Z00018
Density (mass)
Mass Fraction
of BaO
( % )
Mass Fraction
of free C
( % )
Density
 
( g cm-3 )
0.0 1.0 2.49
1.0 1.0 2.49
3.0 1.0 3.00
5.0 1.0 3.06
10.0 1.0 2.72
5.0 0.0 1.84
5.0 0.3 2.19
5.0 1.0 3.04
5.0 2.0 2.90

Measurement Method: Unknown
Evaluation Status: Unevaluated
Cautions:
No measurement details were noted. Digitized data were obtained from Figure 1 of the paper.

SiC·xBaO·yC

Material number 1 of 1
in SCD Citation Number: Z00018
Flexural Strength
Temperature
 
( °C )
Mass Fraction
of BaO
( % )
Mass Fraction
of free C
( % )
Flexural
Strength
( MPa )
22 5 1 216
Measurement Method: Three-point bend test
Evaluation Status: Evaluated by acceptance criteria

SiC·xBaO·yC

Material number 1 of 1
in SCD Citation Number: Z00018
Thermal Conductivity
Mass Fraction
of BaO
( % )
Mass Fraction
of free C
( % )
Thermal
Conductivity
( W m-1 K-1 )
0.0 1.0 121
1.0 1.0 85
3.0 1.0 61
5.0 1.0 20
10.0 1.0 20
5.0 0.2 120
5.0 1.0 20
5.0 2.0 13
Measurement Method: Laser flash technique
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Digitized data were obtained from Figure 1 of the paper.