NIST Structural Ceramics Database (SCD) Database

NIST Standard Reference Database 30

Last Update to Data Content: 2002

DOI: http://dx.doi.org/10.18434/T4F30D


SCD Citation Number: Z00020

Bibliographic Information

Reference:
"Hot-Pressing of β-SiC Powder with Al-B-C Additives," B.W. Lin, M. Imai, T. Yano, and T. Iseki, Journal of the American Ceramic Society, Vol. 69 [4], pp. C67-C68 (1986), published by American Ceramic Society.
Language: English

General Materials Processing Notes

"Submicrometer β-SiC powder was used as a starting material. The average grain size was 0.28 µm and the powder was 98.9% pure (main impurities (mass fractions): free carbon 0.57 %, SiO2 0.36 %, and Fe and Al < 400 ppm). The powder was wet-mixed in benzene with 6 % Al, 1 % amorphous B, and 1 % carbon black. After the mixed powders were dried, they were compacted under 250 MPa hydrostatic pressure to obtain blocks with a density of (about) 58% of theoretical. The powder compacts were hot pressed at 1600 °C to 1800 °C for 30 min under 20 MPa to 60 MPa in an atmosphere of 100 kPa Ar using a graphite resistance electric furnace. The temperature was increased from room temperature to sintering temperature at 10 °C/min. Pressure was applied to the powder compact when the temperature reached 1000 °C and was released 10 min before the end of the holding time."


Measurement Methods

Archimedes' method
"The bulk density of the bodies was measured by the water immersion technique."
Four-point bend test
"The specimen blocks obtained (27 mm by 27 mm by 4.5 mm) were cut and polished into bars (27 mm by2 mm by 4 mm) with diamond tools. ... The bending strength was measured by four-point bending, with an upper span of 10 mm, a lower span of 20 mm, and a crosshead speed of 0.5 mm/min. The surface roughness of the specimens was 0.2 µm (maximum height). The edges of the tensile side of the specimens were rounded with a radius of (about) 0.2 mm. Room-temperature bending strength was measured in air, and high-temperature measurement was done at 26 mPa while the temperature was held at 1200°C or 1400°C for 20 min. The numbers of specimens fractured at room temperature and the high temperatures were 6 to 10 and 3, respectively."

Index of Materials and Properties

Material Number 1: SiC

Material Specification and Properties for SiC

Material number 1 of 1
in SCD Citation Number: Z00020
Chemical Class: Carbide
Chemical Family: Si-C
Formula: SiC
Informal Name: silicon carbide
Manufacturer: In-House
Process: Hot Pressing

SiC

Material number 1 of 1
in SCD Citation Number: Z00020
Elemental Composition
Amount of
Element
( formula units )
Element
 
( no unit )
1 Si
1 C

Measurement Method: Reported Formula
Evaluation Status: Unevaluated

SiC

Material number 1 of 1
in SCD Citation Number: Z00020
Density (mass)
Hot-Press
Pressure
( MPa )
Hot-Press
Temperature
( °C )
Density
 
( g cm-3 )
20 1650 2.65
30 1650 2.85
40 1650 3.02
50 1650 3.08
60 1650 3.11
50 1600 2.86
50 1650 3.08
50 1700 3.16
50 1750 3.17
50 1800 3.17
Measurement Method: Archimedes' method
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Digitized data were obtained from Figures 1 and 2 of the paper.

SiC

Material number 1 of 1
in SCD Citation Number: Z00020
Flexural Strength
Hot Pressing
Pressure
( MPa )
Hot Pressing
Temperature
( °C )
Temperature
 
( °C )
Flexural
Strength
( MPa )
20 1650 22 350 ± 30
30 1650 22 370
40 1650 22 410
50 1650 22 485
60 1650 22 555
50 1650 1200 475 ± 50
50 1650 1400 325
50 1600 22 265 ± 30
50 1650 22 490
50 1700 22 520
50 1750 22 515
50 1800 22 575
50 1800 1200 490 ± 50
50 1800 1400 450
Measurement Method: Four-point bend test
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Digitized data were obtained from figures 1 and 2 of the paper.