NIST Standard Reference Database 30
Last Update to Data Content: 2002
"Crack Propagation in Sintered Alpha Silicon Carbide," E.H. Kraft and R.H. Smoak, Report - Fall Meeting, American Ceramic Society, 1977, pp. 3-7 (1977), published by The Carborundum Company.Language: English
"Developmental sintered alpha SiC is typically a dense (98% theoretical) material with a microstructure containing equiaxed alpha silicon carbide grains with an average size of approximately seven micrometers. ...the sintered alpha SiC specimens were prepared by a standard cold pressing and sintering process..."
"The single edge notched beam (SENB), surface crack bend (SCB), and intrinsic flaw fractography (IFF) techniques were used. ... Elevated temperature tests were performed in argon. Specimen dimensions were 2.5 mm (0.100 in.) x 5.0 mm (0.200 in.) x 50.8 mm (2.0 in.) long, with a saw cut notch 2 mm (0.080 in) deep x 0.4 mm (0.015 in.) wide on the wide face for SENB specimens, a 2500 g Knoop indentation with 0.05 mm (0.002 in.) susbsequently ground off for SCB specimens and no further treatment for IFF specimens."
| Amount of Element ( formula units ) |
Element ( no unit ) |
|---|---|
| 1 | Si |
| 1 | C |
| Temperature ( °C ) |
Technique |
Fracture Toughness ( MPa m1/2 ) |
|---|---|---|
| 22 | SENB | 5.4 ± 0.2 |
| 1000 | SENB | 6.8 ± 0.3 |
| 1600 | SENB | 8.8 ± 0.6 |
| 22 | SCB | 2.8 ± 0.3 |
| 1000 | SCB | 4.0 ± 0.5 |
| 22 | IFF | 4.7 ± 0.6 |
| 1500 | IFF | 5.0 ± 0.3 |