NIST Structural Ceramics Database (SCD) Database

NIST Standard Reference Database 30

Last Update to Data Content: 2002

DOI: http://dx.doi.org/10.18434/T4F30D


SCD Citation Number: Z00043

Bibliographic Information

Reference:
"Effect of Creep Damage on the Tensile Creep Behavior of a Siliconized Silicon Carbide," D.F. Carroll and R.E. Tressler, Journal of the American Ceramic Society, Vol. 72 [1], pp. 49-53 (1989), published by American Ceramic Society.
Language: English

General Materials Processing Notes

SCD Citation Number: Z00043
"The siliconized silicon carbide examined in this study contained approximately 33.7 % to 35.7 % (volume fraction) free silicon metal with the remainder of the material composed of silicon carbide grains, 4 µm to 6 µm in size."

Measurement Methods

SCD Citation Number: Z00043
Creep test (tension)
Specimens were cut from rectangular blanks, approximately 76.2 mm x 12.7 mm x 2.5 mm, with a 320-grit finish, using wire electrodischarge machining. The final shape was a flat "dog-bone" with two target arms and a gauge length of 17.5 mm. Two holes, machined directly on the specimen's centerline and machined to uniform smoothness, were used to pin the specimen to the loading system. The tensile test specimen was attached to two siliconized silicon carbide grips with α-silicon carbide pins. The pin and grip assembly was located inside the furnace with the grips extending outside the furnace to attach to the loading system. Loads were applied by hanging weights on a loading platform design to minimize the bending moment. Creep elongation was measured by an optical extensometer with a resolution of 1µm at 1100°C in air.

Index of Materials and Properties

SCD Citation Number: Z00043
Material Number 1: SiC

Material Specification and Properties for SiC

Material number 1 of 1
in SCD Citation Number: Z00043
Chemical Class: Carbide
Chemical Family: Si-C
Formula: SiC
Informal Name: silicon carbide
Structure Type: Polycrystalline
Manufacturer: Sohio Engineered Materials Co.
Commercial Name: KX-01
Process: Sintering

SiC

Material number 1 of 1
in SCD Citation Number: Z00043
Elemental Composition
Amount of
Element
( formula units )
Element
 
( no unit )
1 Si
1 C

Measurement Method: Reported Formula
Evaluation Status: Unevaluated

SiC

Material number 1 of 1
in SCD Citation Number: Z00043
Creep Activation Energy
Temperature
 
( °C )
Applied Stress
 
( MPa )
Creep Activatn
Energy
( kJ mol-1 )
1100-1200 103 175
1100-1200 137 210
1100-1200 172 350

Measurement Method: Creep test (tension)
Evaluation Status: Evaluated by acceptance criteria

SiC

Material number 1 of 1
in SCD Citation Number: Z00043
Creep Rate Exponent
Temperature
 
( °C )
Applied Stress
 
( MPa )
Creep Rate
Exponent
( no unit )
1100 103 4
1100 120 4
1100 137 4
1100 137 10
1100 160 10
1100 170 10

Measurement Method: Creep test (tension)
Evaluation Status: Evaluated by acceptance criteria
Cautions:
The creep exponent was 4 below the threshold stress for creep damage, and 10 above the threshold.