NIST Structural Ceramics Database (SCD) Database

NIST Standard Reference Database 30

Last Update to Data Content: 2002

DOI: http://dx.doi.org/10.18434/T4F30D


SCD Citation Number: Z00044

Bibliographic Information

Reference:
"Hot Isostatic Press Sintering and Properties of Silicon Nitride without Additives," I. Tanaka, G. Pezzotti, T. Okamoto, and Y. Miyamoto, Journal of the American Ceramic Society, Vol. 72 [9], pp. 1656-1660 (1989), published by American Ceramic Society.
Language: English

General Materials Processing Notes

Ube E-10 powder was compacted by uniaxial pressing at 20 MPa and cold isostatic pressing at 200 MPa. The compact was coated with BN powder and prefired at 1200 °C in vacuum. Then, encapsulated in borosilicate glass tubes, hot isostatic pressing was done at 2000 °C, 170 MPa in argon gas for one hour.
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Measurement Methods

Four-point bend test
Four-point bend tests with inner and outer spans of 10 mm and 30 mm and a crosshead speed of 0.5 mm/min were performed in air. Bars of dimensions 3 mm x 4 mm x 34 mm were used. The specimen surface was ground with a 400-grit diamond wheel.
Vickers indentation
The authors cite K. Niihara et al., J. Am. Cer. Soc., Vol. 65, C-116 (1982) and summarize the procedure as follows. The Vickers microindentation method was used with loads of 9.8 N to 49 N applied with a loading rate of 0.2 mm/s. The maximum load was applied for 15 s.
Mechanical resonance
The authors cite K. Matsushita et al., J. Mater. Sci. Letter, Vol.3, 345-348 (1984) and summarize the procedure as follows. Specimens were 2 mm x 8 mm x 34 mm. The resonant frequency was 17 kHz.

Index of Materials and Properties

SCD Citation Number: Z00044
Material Number 1: Si3N4

Material Specification and Properties for Si3N4

Material number 1 of 1
in SCD Citation Number: Z00044
Chemical Class: Nitride
Chemical Family: Si-N
Formula: Si3N4
Informal Name: silicon nitride
Structure Type: Polycrystalline
Manufacturer: In-House
Process: Hot Isostatic Pressing

Si3N4

Material number 1 of 1
in SCD Citation Number: Z00044
Phase Composition
Amount of
Phase
( % )
Phase
 
( no unit )
100 βSi3N4

Measurement Method: Reported Formula
Evaluation Status: Unevaluated

Si3N4

Material number 1 of 1
in SCD Citation Number: Z00044
Elemental Composition
Amount of
Element
( formula units )
Element
 
( no unit )
3 Si
4 N
Measurement Method: Reported Formula
Evaluation Status: Unevaluated

Si3N4

Material number 1 of 1
in SCD Citation Number: Z00044
Elastic Modulus
Temperature
 
( °C )
Elastic
Modulus
( GPa )
22 312.2
100 312.4
200 312.0
300 311.5
400 310.6
500 309.6
600 308.5
700 307.3
800 305.9
900 304.5
Measurement Method: Mechanical resonance
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Data were digitized from Fig. 7 of the paper with a resolution of ±0.1 GPa.

Si3N4

Material number 1 of 1
in SCD Citation Number: Z00044
Flexural Strength
Temperature
 
( °C )
Flexural
Strength
( MPa )
22 544
1000 523
1400 523

Measurement Method: Four-point bend test
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Data were digitized from Fig. 5 of the paper, with a resolution of ±3 MPa.

Si3N4

Material number 1 of 1
in SCD Citation Number: Z00044
Fracture Toughness
Temperature
 
( °C )
Fracture
Toughness
( MPa m1/2 )
22 3.12
200 3.18
500 2.85
800 2.83
1000 2.59
1100 2.61
1200 2.58

Measurement Method: Vickers indentation
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Data were digitized from Fig. 6 of the paper, with a resolution of ±0.05 MPa·m1/2.

Si3N4

Material number 1 of 1
in SCD Citation Number: Z00044
Hardness
Temperature
 
( °C )
Hardness
 
( GPa )
22 14.6
200 14.4
500 13.0
800 11.0
900 11.5
1000 11.5
1100 10.8
1200 10.2

Measurement Method: Vickers indentation
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Data were digitized from figure 4 of the paper, with a resolution of ±0.2 GPa.