NIST Structural Ceramics Database (SCD) Database

NIST Standard Reference Database 30

Last Update to Data Content: 2002

DOI: http://dx.doi.org/10.18434/T4F30D


SCD Citation Number: Z00623

Bibliographic Information

Reference:
"Thermal Expansion of Gallium Nitride," M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, and T. Moustakas, Journal of Applied Physics, Vol. 76 [8], pp. 4909-4911 (1994), published by American Institute of Physics.
Language: English

General Materials Processing Notes

"... measurements of GaN (wurzite structure)... were performed on the bulk crystal grown at a pressure of 15 kbar and on a 2 µm layer grown by molecular beam epitaxy at a temperature of 1073 K (20 nm buffer was deposited at 773 K) on (0001) oriented sapphire. Prior to the deposition the sapphire substrate was converted to AlN by exposing it to nitrogen plasma."

Measurement Methods

X-ray diffraction
"The measurements were performed by using the Bond diffractometer, the double-crystal diffractometer, and the high-resolution diffractometer equipped with a four-reflection (022) Ge monochromator. A set of symmetrical [(00.4), (00.6)] and asymmetrical [(11.3), (11.4) CuKα1] reflections was used for a calculation of lattice constants of GaN and (00.12), (23.4) CuKα1 for the sapphire. The high temperature was obtained in a resistance furnance with 0.1 K stability."

Index of Materials and Properties (Click on a selected Material Number to expand material properties menu)

Material Specification and Properties for GaN

Material number 1 of 3
in SCD Citation Number: Z00623
Chemical Class: Nitride
Chemical Family: Ga-N
Formula: GaN
Informal Name: gallium nitride
Structure Type: Single Crystal
Manufacturer: In-House
Process: Crystal Growth

GaN

Material number 1 of 3
in SCD Citation Number: Z00623
Crystal Cell Axes
Specimen
Type
 
Axis
 
 
Temperature
 
( K )
Axis Length
 
( Å )
Bulk a 294 3.1880
Bulk a 343 3.1885
Bulk a 403 3.1891
Bulk a 453 3.1897
Bulk a 503 3.1903
Bulk a 553 3.1910
Bulk a 603 3.1917
Bulk a 653 3.1925
Bulk a 703 3.1935
Bulk a 753 3.1945
Bulk c 294 5.18561
Bulk c 343 5.18633
Bulk c 403 5.18699
Bulk c 453 5.18772
Bulk c 503 5.18841
Bulk c 553 5.18911
Bulk c 603 5.19009
Bulk c 653 5.19232
Bulk c 703 5.19360
Bulk c 753 5.19520
Measurement Method: X-ray diffraction
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Reported standard deviations in the values of the lattice parameters: a-axis: 0.0001Å c-axis: 0.0005Å

Material Specification and Properties for GaN

Material number 2 of 3
in SCD Citation Number: Z00623
Chemical Class: Nitride
Chemical Family: Ga-N
Formula: GaN
Informal Name: gallium nitride
Structure Type: Polycrystalline
Manufacturer: In-House
Production Form: Thin Film
Process: Crystal Growth

GaN

Material number 2 of 3
in SCD Citation Number: Z00623
Crystal Cell Axes
Specimen
Type
 
Axis
 
 
Temperature
 
( K )
Axis Length
 
( Å )
Thin Film a 294 3.1871
Thin Film a 343 3.1877
Thin Film a 403 3.1884
Thin Film a 453 3.1890
Thin Film a 503 3.1897
Thin Film a 553 3.1904
Thin Film a 603 3.1913
Thin Film a 653 3.1922
Thin Film a 703 3.1931
Thin Film a 753 3.1942
Thin Film c 294 5.1857
Thin Film c 343 5.1863
Thin Film c 403 5.1870
Thin Film c 453 5.1878
Thin Film c 503 5.1886
Thin Film c 553 5.1894
Thin Film c 603 5.1908
Thin Film c 653 5.1922
Thin Film c 703 5.1936
Thin Film c 753 5.1952
Measurement Method: X-ray diffraction
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Reported standard deviations in the values of the lattice parameters: a-axis: 0.0002Å c-axis: 0.0001Å

Material Specification and Properties for Al2O3

Material number 3 of 3
in SCD Citation Number: Z00623
Chemical Class: Oxide
Chemical Family: Al-O
Formula: Al2O3
Informal Name: sapphire
Structure Type: Single Crystal
Manufacturer: In-House
Process: Crystal Growth

Al2O3

Material number 3 of 3
in SCD Citation Number: Z00623
Crystal Cell Axes
Specimen
Type
 
Axis
 
 
Temperature
 
( K )
Axis Length
 
( Å )
Bulk a 294 4.7577
Bulk a 343 4.7587
Bulk a 403 4.7598
Bulk a 453 4.7610
Bulk a 503 4.7624
Bulk a 553 4.7640
Bulk a 603 4.7657
Bulk a 653 4.7674
Bulk a 703 4.7691
Bulk a 753 4.7713
Bulk c 294 12.9907
Bulk c 343 12.9927
Bulk c 403 12.9960
Bulk c 453 12.9993
Bulk c 503 13.0030
Bulk c 553 13.0076
Bulk c 603 13.0124
Bulk c 653 13.0172
Bulk c 703 13.0230
Bulk c 753 13.0291
Measurement Method: X-ray diffraction
Evaluation Status: Evaluated by acceptance criteria
Cautions:
Reported standard deviations in the values of the lattice parameters: a-axis: 0.0001Å c-axis: 0.0001Å