Tab Page Summary
element, II-VI semiconductor, IV semiconductor
Safta N., Lacharme J.P., Cricenti A., Taleb-Ibrahimi A., Indlekofer G., Aristov V., et al.
Nucl. Instruments Methods in Phys. Res. Sec. B 97, 372
110.1016/0168-583X(94)00355-6
Instruction: Click the column to sort in ascending or descending order. Enter a string in the input box in the column header and press the enter to filter the search result in the selected column. Click on the hyperlink in the column for more information. Total Records: 14
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(110)-(2x8). The sample was cleaned by annealing at ~ 1173 K. FAT mode. The spectra were recorded at normal emission and 55 degrees. Branching ratio = 0.50.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
Go Back