Tab Page Summary
element, II-VI semiconductor, IV semiconductor
Safta N., Lacharme J.P., Cricenti A., Taleb-Ibrahimi A., Indlekofer G., Aristov V., et al.
Nucl. Instruments Methods in Phys. Res. Sec. B 97, 372
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Total Records: 14
Surface Core-level Shift for the Second Layer of Atoms
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(110)-(2x8). The sample was cleaned by annealing at ~ 1173 K. FAT mode. Emission angle = 55 degrees. Branching ratio = 0.50.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300