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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
As/Si
XPS Formula:
As dimers
Name:
arsenic/silicon
CAS Registry No:
7440-38-2
Class:
arsenic, element, IV-VI semiconductor

Citation:
Author Name(s):
Rochet F., Poncey C., Dufour G., Roulet H., Rodrigues W.N., Sauvage M., et al
Journal:
Surf. Sci. 326, 229
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d5/2
Binding Energy (eV)
41.48
Energy Uncertainty:
0.04
Background Subtraction Method:
Shirley
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.52
Lorentzian Width (eV):
0.16

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
145
Overall Energy Resolution (eV):
0.30
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
B-doped Si(001)-(2x1) with a resistivity between 0.076 and 0.1ohm cm was exposed to an As4 flux at 773 K under a pressure of about 1E-6 Torr. LEED pattern was also (2x1).

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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