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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
dimer down-atoms
germanium
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Goldoni A., Modesti S., Dhanak V.R., Sancrotti M., Santoni A.
Phys. Rev. B 54, 11340
Pub Year:
1996

Data Processing:
Surface Core-level Shift for the Second Layer of Atoms
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
45/70
Overall Energy Resolution (eV):
0.23
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-Ge(100)-(2x1). The sample was prepared by cycles of Ar+ ion bombardment and annealing (T = 1000 K) followed by slow cooling to 300 K. The spectra were recorded at normal emission and 70 degrees. Branching ratio = 0.66+-0.03. The coverage related to this state was 1.0 ML.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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