There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ge
Formula:
Ge
XPS Formula:
dimer down-atoms
Name:
germanium
CAS Registry No:
7440-56-4
Class:
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Author Name(s):
Goldoni A., Modesti S., Dhanak V.R., Sancrotti M., Santoni A.
Journal:
Phys. Rev. B 54, 11340
DOI:
Pub Year:
1996

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS2-3d5/2
Surface Core-Level Shift (eV) for the second Layer of Atoms
-0.53
Energy Uncertainty:
0.02
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.35
Lorentzian Width (eV):
0.15

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
45/70
Overall Energy Resolution (eV):
0.23
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-Ge(100)-(2x1). The sample was prepared by cycles of Ar+ ion bombardment and annealing (T = 1000 K) followed by slow cooling to 300 K. The spectra were recorded at normal emission and 70 degrees. Branching ratio = 0.66+-0.03. The coverage related to this state was 1.0 ML.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
An error has occurred. This application may no longer respond until reloaded. Reload 🗙