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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
C
Formula:
C60/Si
Name:
(C(60)-I(h)[5,6]fullerene/silicon
CAS Registry No:
135105-52-1
Class:
element

Citation:
Author Name(s):
Vasquez R.P., Brain R.A., Ross D., Yeh N.-C.
Journal:
Surf. Sci. Spectra 1, 242
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV)
284.80
Energy Uncertainty:
Background Subtraction Method:
Shirley
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
0.57
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu = 84.00,932.67
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
~ 100 nm C60 were grown by thermal evaporation on Si(111) at 333 K. The substrate was HF etched immediately prior to film growth. FAT mode. The spectra were recorded at normal emission. The intensity ratio of the Gaussian/Lorentzian components was 70/30.

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300
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