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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
silicon
element, II-VI semiconductor, IV semiconductor

Citation:
Ley L., Wang Y., Van V.N., Fisson S., Souche D., Vuye G., et al.
Thin Solid Films 270, 561
Pub Year:
1995

Data Processing:
Doublet Separation for Photoelectron Lines

Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.8
Calibration:
Pt4f7 = 71.12
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Branching ratio = 0.5

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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