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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
In
Formula:
InAs
Name:
indium(III) arsenide
CAS Registry No:
1303-11-3
Class:
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Author Name(s):
Nowak C., Krujatz J., Markl A., Meyne C., Chasse A., Braun W., et al.
Journal:
Surf. Sci. 331, 619
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-4d
Double Separation (eV)
0.86
Energy Uncertainty:
0.01
Background Subtraction Method:
other
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
55
Overall Energy Resolution (eV):
0.20
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type InAs(110) with a carrier concentration of 1.1E17 cm-3. Branching ratio =

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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