There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
C
Formula:
SiC
Name:
silicon carbide
CAS Registry No:
409-21-2
Class:
carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:
Author Name(s):
Bozack M.J.
Journal:
Surf. Sci. Spectra 3, 82
DOI:
Pub Year:
1994

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV)
283.40
Energy Uncertainty:
Background Subtraction Method:
Shirley
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
1.9
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Ag,Cu = 368.27,932.67
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type doped 6H-SiC(0001) with a carrier concentration of 3.8E18 cm-3. The composition determined by XPS was Si0.566C0.434. The spectra were recorded at normal emission.

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
An error has occurred. This application may no longer respond until reloaded. Reload 🗙