NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Tab Page Summary
General:
Si
O2/Si
Si(0) state
oxygen/silicon
7782-44-7
element, IV semiconductor, non-stoichiometric oxide, oxide
Citation:
Poncey C., Rochet F., Dufour G., Roulet H., Sirotti F., and Panaccione G.
Surf. Sci. 338, 143
Pub Year:
1995
Data Processing:
Chemical Shift
CS-2p3/2
0.00
Shirley
mixed Gaussian/Lorentzian
0.46
Measurement:
Anode Material:
other source
X-ray Energy:
145
Overall Energy Resolution (eV):
0.30
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
n-type P-doped Si(001) and Si(111) surfaces with a resistivity of 0.002 - 0.005 ohm cm were exposed to 90 L O2 at 875 K. The wafer was cleaned by heating (T = 1325 K, time = 15 s). The spectra were recorded at normal emission. The relative intensity was 0.561. Branching ratio = 0.5.
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300