NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 6

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

O₂/Si

CS-2p_3/2

0.00

O₂/Si

CS-2p_3/2

0.92

O₂/Si

CS-2p_3/2

1.80

O₂/Si

CS-2p_3/2

2.56

O₂/Si

CS-2p_3/2

3.22

O₂/Si

DS-2p

0.60

Data Processing:

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-2p

Double Separation (eV)

0.60

Energy Uncertainty:

Background Subtraction Method:

Shirley

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

145

Overall Energy Resolution (eV):

0.30

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

n-type P-doped Si(001) and Si(111) surfaces with a resistivity of 0.002 - 0.005 ohm cm were exposed to 90 L O2 at 875 K. The wafer was cleaned by heating (T = 1325 K, time = 15 s). The spectra were recorded at normal emission. Branching ratio = 0.5.

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300