NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

adatoms

silicon

7440-21-3

element, II-VI semiconductor, IV semiconductor

Citation:

Author Name(s):

Scholz S.M., Jacobi K.

Journal:

Surf. Sci. 369, 117

DOI:

Pub Year:

1996

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-2p_3/2

Surface Core-Level Shift (eV)

-0.57

Energy Uncertainty:

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.450

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

135

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Si(113)-(3x2). FAT mode. The spectra were recorded at normal emission and 40 degrees. Branching ratio = 0.52. The relative intensity was 0.11.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300