NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Si

Si₀.₃₉₇Ge₀.₉O₀.₅₉₄

silicon germanium oxide (Si0.397Ge0.9O0.594)

CAS Registry No:

double oxide, oxide

Citation:

Author Name(s):

Kibel M.H., Leech P.W.

Surf. Interface Anal. 24, 605

Pub Year:

1996

book All Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

2p

Binding Energy (eV)

103.50

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The Ge-doped layers were formed by flame hydrolysis deposition. The sample was cleaned by Ar+ ion bombardment (Ep = 5 keV, j =~ 2 microamperes cm-2, time = 2 min). FAT mode.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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