Tab Page Summary
carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide
Chorasia A.R., Hood S.J., Chopra D.R.
J. Vac. Sci. Technol. A 14, 699
Instruction:- Click the column to sort in ascending or descending order.
- Enter a string in the input box in the column header and press the enter to filter the search result in the selected column.
- Click on the hyperlink in the column for more information.
Total Records: 5
Anode Material:
other anode
Overall Energy Resolution (eV):
Calibration:
Au,Ag,Cu = 84.00,368.27,932.67
Charge Reference:
Element
Energy Scale Evaluation:
Reliable, with two-point correction of energy scale
Comment:
The sample was cleaned by Ar+ ion bombardment (Ep = 3 keV, j = 4 microamperes cm-2, time = 5 min). FAT mode. Hexagonal structure.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300