NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

C

SiC

carbon atoms in a modified ("carburized") topmost bilayer

silicon carbide

CAS Registry No:

409-21-2

carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:

Author Name(s):

Johansson L.I., Owman F., Martensson P.

Phys. Rev. B 53, 13793

Pub Year:

1996

book All Records in this Publication

Data Processing:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-1s

Surface Core-Level Shift (eV) for the first Layer of Atoms

1.46

Energy Uncertainty:

0.09

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

1.35

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

330

Overall Energy Resolution (eV):

0.20

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type doped 6H-SiC(0001) with a carrier concentration of 3.8E18 cm-3. The (R3xR3)R30 degrees reconstructed surface was prepared by resistive heating (T = 1123 K, time = 2 min). The spectra were recorded at normal emission.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

100

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