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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
SiC
XPS Formula:
silicon atoms in the second bilayer
Name:
silicon carbide
CAS Registry No:
409-21-2
Class:
carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:
Author Name(s):
Johansson L.I., Owman F., Martensson P.
Journal:
Phys. Rev. B 53, 13793
DOI:
Pub Year:
1996

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS2-2p3/2
Surface Core-Level Shift (eV) for the second Layer of Atoms
-0.41
Energy Uncertainty:
0.04
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.33
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
130
Overall Energy Resolution (eV):
0.08
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type doped 6H-SiC(0001) with a carrier concentration of 3.8E18 cm-3. The (R3xR3)R30 degrees reconstructed surface was prepared by resistive heating (T = 1123 K, time = 2 min). The spectra were recorded at normal emission.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
100
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