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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Summary Page
Tab Page Summary
General:
Element:
Si
Formula:
C
2
H
4
/Si
Name:
ethylene/silicon
CAS Registry No:
74-85-1
Class:
carbide, element, hydrocarbon
Citation:
Author Name(s):
Takagaki T., Igari Y., Takaoka T., Kusunoki I.
Journal:
Appl. Surf. Sci. 92, 287
DOI:
10.1016/0169-4332(95)00243-X
Pub Year:
1996
book
All Records in this Publication
Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
1/2
Binding Energy (eV)
99.70
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
0.5
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Si2p3 = 99.34
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
C2H4 flux 2.7E15 molecules cm-2 s-1/Si(100) ) with a resistivity of 10 - 20 ohm cm (T = 1123 K, time = 30 min). The C/Si intensity ratio determined by XPS was 0.5. Branching ratio = 0.5.
Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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