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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
C2H4/Si
XPS Formula:
carbide state
Name:
ethylene/silicon
CAS Registry No:
74-85-1
Class:
carbide, element, hydrocarbon

Citation:
Author Name(s):
Takagaki T., Igari Y., Takaoka T., Kusunoki I.
Journal:
Appl. Surf. Sci. 92, 287
DOI:
Pub Year:
1996
book All Records in this Publication

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-2p1/2
Chemical Shift (eV)
1.30
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Si2p3 = 99.34
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
C2H4 flux 2.7E15 molecules cm-2 s-1/Si(100) ) with a resistivity of 10 - 20 ohm cm (T = 1123 K, time = 30 min). The C/Si intensity ratio determined by XPS was 0.5. Branching ratio = 0.5.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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