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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
In
Formula:
InSb
Name:
indium stibnide
CAS Registry No:
1312-41-0
Class:
II-VI semiconductor, III-V semiconductor, intermetallic, stibnide

Citation:
Author Name(s):
Kim J.W., Kim S., Seo J.M., Tanaka S.-I., Kamada M.
Journal:
Phys. Rev. B 54, 4476
DOI:
Pub Year:
1996

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS1-4d5/2
Surface Core-Level Shift (eV) for the first Layer of Atoms
0.55
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.52
Lorentzian Width (eV):
0.14

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
54
Overall Energy Resolution (eV):
0.25
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
p-InSb(110)-(2x2). The sample was cleaned by cycles of Ar+ ion bombardment and annealing (T = 573 K) and final annealing (T = ~623 K). Branching ratio = 0.70. Emission angle = 10 degrees. The relative intensity of the surface component was 0.13.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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