NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Tab Page Summary
General:
In
InAs
indium(III) arsenide
1303-11-3
arsenide, II-VI semiconductor, III-V semiconductor
Citation:
Andersson C.B.M., Olsson L.O, Hakansson M.C., Ilver L., Karlsson U.O., and Kanski J.
J. Phys. IV 4, C9-209
Pub Year:
1994
Data Processing:
Doublet Separation for Photoelectron Lines
DS-4d
mixed Gaussian/Lorentzian
Measurement:
Anode Material:
other source
X-ray Energy:
105
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type S-doped InAs(-1-1-1)-(1x1). Peak locations: Voigt function. The spectra were recorded at normal emission and 60 degrees, the branching ratios were 0.81 and 0.78, respectively.
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300