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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
In
Formula:
In0.9Ga0.1As
XPS Formula:
In*0.9Ga0.1As
Name:
indium gallium arsenide alloy (0.9-0.1-1)
CAS Registry No:
Class:
alloy, arsenide, III-V semiconductor

Citation:
Author Name(s):
Hwang J., Pianetta P., Shih C.K., Spicer W.E., Pao Y. -C., and Harris J.S, Jr.
Journal:
Appl. Phys. Lett. 51, 1632
DOI:
Pub Year:
1987

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
4d5/2
Binding Energy (eV)
16.90
Energy Uncertainty:
0.05
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
30
Overall Energy Resolution (eV):
0.3
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The InGaAs alloy was grown with thicknesses ranging from 400 A to 2000 A. InGaAs(001)-c(4x4). The VBMin is located by extrapolating the leading edge of the valence band.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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