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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
O3/GaAs
XPS Formula:
As 2+ charge state in AsOx
Name:
ozone/gallium arsenide
CAS Registry No:
Class:
arsenide, IV-VI semiconductor, non-stoichiometric oxide

Citation:
Author Name(s):
Lan W.M., Sodhi R.N.S., Jau S., Ingrey S.
Journal:
J. Vac. Sci. Technol. A 8, 1899
DOI:
Pub Year:
1990

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-3d5/2
Chemical Shift (eV)
2.90
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7=84.00
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
GaAs(100) was exposed to ultraviolet light and ozone for 20 min. The oxide thickness was evaluated as 4 nm. The chemical shift is relative to the pure GaAs

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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