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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
Ti/GaAs
XPS Formula:
Ti/GaAs*
Name:
titanium on gallium arsenide
CAS Registry No:
7440-32-6
Class:
arsenide, element, IV-VI semiconductor

Citation:
Author Name(s):
Ruckman M.W., del Giudice M., Joyce J.J., Weaver J.H.
Journal:
Phys. Rev. B 33, 2191
DOI:
Pub Year:
1986

Data Processing:
Data Type:
Interface Core-Level Shift
Line Designation:
INT-3d
Interface Core-Level Shift
-1.05
Energy Uncertainty:
0.05
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
85
Overall Energy Resolution (eV):
0.35
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Calibration study
Comment:
60A Ti/GaAs. GaAs(110) surface were obtained by cleaving n-type crystals (Si doped at 4E18 cm-3). The energy is referenced to the bulk state of the As3d line. Ti deposition rate and amount were determined with a quartz-crystal-oscillator. Surface core-level shift derived from analysis of spectra for photon energies of 55 eV and 85 eV.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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