60A Ti/GaAs. GaAs(110) surface were obtained by cleaving n-type crystals (Si doped at 4E18 cm-3). The energy is referenced to the bulk state of the As3d line. Ti deposition rate and amount were determined with a quartz-crystal-oscillator. Surface core-level shift derived from analysis of spectra for photon energies of 55 eV and 85 eV.