Tab Page Summary
samarium/gallium arsenide
arsenide, III-V semiconductor, IV-VI semiconductor
Joyce J.J., Grioni M., del Giudice M., Ruckman M.W., Boscherini F., and Weaver J.H.
J. Vac. Sci. Technol. A 5, 2019
Interface Core-Level Shift
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
2-40 A Sm/GaAs. The energy is referenced to the bulk state of the Ga3d line.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300