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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
N
Formula:
GaN
Name:
gallium nitride
CAS Registry No:
25617-97-4
Class:
II-VI semiconductor, III-V semiconductor, nitride

Citation:
Author Name(s):
Carin R., Deville J.P., Werckmann J.
Journal:
Surf. Interface Anal. 16, 65
DOI:
Pub Year:
1990

Data Processing:
Data Type:
Auger-Electron Line
Line Designation:
KVV
Kinetic Energy (eV)
385.00
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
FL
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Comment:

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
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