NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Si

SiOx/Si

silicon atoms bound to four oxygen atoms

silicon oxides/silicon

CAS Registry No:

11126-22-0

anhydride, element, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Bekkay T., Sacher E., Yelon A.

Surf. Sci. 217, L377

Pub Year:

1989

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Total Records: 2

Data Processing:

Photoelectron Line

Line Designation:

2s

Binding Energy (eV)

153.90

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Crystalline Si(111)

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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