NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

GaN

gallium nitride

25617-97-4

II-VI semiconductor, III-V semiconductor, nitride

Citation:

Author Name(s):

Carin R., Deville J.P., Werckmann J.

Journal:

Surf. Interface Anal. 16, 65

DOI:

Pub Year:

1990

book All Records in this Publication

Data Processing:

Auger-Electron Line

L₃M₄₅M₄₅(¹G)

1064.20

Background Subtraction Method:

Peak Location Method:

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Comment:

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):