NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 5

Data Processing:

Photoelectron Line

4d_5/2

24.05

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.61

Lorentzian Width (eV):

0.063

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.3

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

0.075-1.2 ML Sn/n-type Si(100). The Sn overlayers were prepared by electron beam evaporation. Substrate temperature was 423-473K. The deposited surface were annealed at 823 K for 2 min. and allowed to cool to 373-423K before measurements. Branching ratio is 0.74.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

High-energy Electron Diffraction

Specimen Temperature (K):

373