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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
La/Si
Name:
lanthanum/silicon
CAS Registry No:
Class:
element, IV semiconductor, rare earth

Citation:
Author Name(s):
Puppin E., Guyot H., Shen Z.X., Hwang J., Lindau I.
Journal:
Solid State Commun. 67, 23
DOI:
Pub Year:
1988

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-2p
Chemical Shift (eV)
0.40
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.2 ML La/Si(111). Clean Si(111) surfaces were prepared by cleaving of n-type (resistivity is 36 Ohm cm) single crystal silicon. The amount of deposited La was measured with a quartz microbalance.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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